# US 11,307,479 B2 · Semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,307,479 B2 - Document ID: US11307479B2 - Status: Granted - Kind: B2 - Application number: 16/829,509 - Filed: 2020-03-25 - Published: 2021-09-30 - Granted: 2022-04-19 - Earliest claimed: 2020-03-25 - Assignees: Renesas Electronics Corporation - Applicants: Renesas Electronics Corporation - Inventors: Teruhiro Kuwajima; Yasutaka Nakashiba - Web page: https://patentgrep.com/patent/US11307479B2 ## CPC - G02F 1/2257: {the optical waveguides being made of semiconducting material} - G02F 1/0147: {based on thermo-optic effects (G02F1/132 takes precedence)} - G02F 1/025: in an optical waveguide structure (G02F1/017, {G02F1/2257} take precedence) - G02F 1/212: {Mach-Zehnder type} - G02F 2202/105: single crystal Si - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS ## Abstract A semiconductor device includes a first insulating layer, an optical modulator, and a multilayer wiring layer. The optical modulator is formed on the first insulating layer. The multilayer wiring layer is formed on the first insulating layer and including a wiring and a resistive element which are spaced apart from each other. The resistive element is formed without overlapping with the optical modulator in plan view. A material of the resistive element is at least one selected from the group consisting of titanium, titanium nitride, tantalum, tantalum nitride, tungsten, and silicon chromium. ## Claims ### Claim 1 A semiconductor device comprising: a first insulating layer; an optical modulator formed on the first insulating layer; and a multilayer wiring layer formed on the first insulating layer such that the multilayer wiring layer covers the optical modulator, the multilayer wiring layer comprising a wiring and a resistive element which are spaced apart from each other, wherein, in plan view, the resistive element is formed without overlapping with the optical modulator, wherein a material of the resistive element is at least one selected from the group consisting of titanium, titanium nitride, tantalum, tantalum nitride, tungsten, and silicon chromium, wherein the multilayer wiring layer comprises: a metallic layer; and a second insulating layer formed between the metallic layer and the wiring, wherein a material of the metallic layer is at least one selected from the group consisting of titanium, titanium nitride, tantalum, tantalum nitride, tungsten, and silicon chromium, wherein the metallic layer, the second insulating layer and the wiring constitute a capacitive element, wherein an end portion of the resistive element is electrically connected with the optical modulator and the metallic layer, and wherein another end portion of the resistive element is electrically connected with the wiring. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein the material of the resistive element is a same as the material of the metallic layer. ### Claim 3 (depends on 2) The semiconductor device according to claim 2, wherein the multilayer wiring layer comprises an inductor electrically connected with the resistive element. ### Claim 4 (depends on 3) The semiconductor device according to claim 3, wherein the resistive element comprises: a plurality of straight portions arranged in parallel with each other; and a plurality of connecting portions, the connecting portion connecting end portions of two straight portions adjacent to each other among the plurality of straight portions, and wherein a planar shape of the resistive element is a corrugated shape. ### Claim 5 (depends on 4) The semiconductor device according to claim 4, wherein, in plan view, the wiring overlaps with an entire of the plurality of straight portions and an entire of the plurality of connecting portions. ### Claim 6 (depends on 4) The semiconductor device according to claim 4, wherein, in plan view, the wiring overlaps with a portion of the resistive element without overlapping with another portion of the resistive element along an extension direction of the straight portion. ### Claim 7 (depends on 4) The semiconductor device according to claim 4, wherein, in plan view, the wiring overlaps with a portion of the resistive element without overlapping with another portion of the resistive element in an arrangement direction of the plurality of straight portions. ### Claim 8 (depends on 3) The semiconductor device according to claim 3, wherein the multilayer wiring layer comprises a heater formed in a same layer as a layer in which the resistive element and the metallic layer are formed, and wherein, in plan view, the heater overlaps with the optical waveguide. ### Claim 9 (depends on 3) The semiconductor device according to claim 3, wherein the optical modulator is configured to operate based on an electrical signal having a frequency of 100 GHz or more. ### Claim 10 (depends on 1) The semiconductor device according to claim 1, wherein the material of the resistive element is at least one selected from the group consisting of titanium nitride, tantalum nitride, tungsten, and silicon chromium. ### Claim 11 A semiconductor device comprising: a first insulating layer; an optical modulator formed on the first insulating layer; and a multilayer wiring layer formed on the first insulating layer such that the multilayer wiring layer covers the optical modulator, the multilayer wiring layer comprising a wiring and a resistive element which are spaced apart from each other, wherein, in plan view, the resistive element is formed without overlapping with the optical modulator, wherein a material of the resistive element is at least one selected from the group consisting of titanium, titanium nitride, tantalum, tantalum nitride, tungsten, and silicon chromium, wherein the multilayer wiring layer comprises a second insulating layer formed between the resistive element and the wiring, wherein the resistive element, the second insulating layer and the wiring constitute a capacitive element, wherein an end portion of the resistive element is electrically connected with the optical modulator, and wherein another end portion of the resistive element is electrically connected with the wiring. ### Claim 12 (depends on 11) The semiconductor device according to claim 11, wherein the multilayer wiring layer comprises an inductor electrically connected with the resistive element. ### Claim 13 (depends on 12) The semiconductor device according to claim 12, wherein the optical modulator is configured to operate based on an electrical signal having a frequency of 100 GHz or more. ### Claim 14 (depends on 12) The semiconductor device according to claim 12, wherein the material of the resistive element is at least one selected from the group consisting of titanium nitride, tantalum nitride, tungsten, and silicon chromium. ### Claim 15 (depends on 11) The semiconductor device according to claim 11, wherein the resistive element comprises: a plurality of straight portions arranged in parallel with each other; and a plurality of connecting portions, the connecting portion connecting end portions of two straight portions adjacent to each other among the plurality of straight portions, and wherein a planar shape of the resistive element is a corrugated shape. ### Claim 16 (depends on 15) The semiconductor device according to claim 15, wherein, in plan view, the wiring overlaps with an entire of the plurality of straight portions and an entire of the plurality of connecting portions. ### Claim 17 (depends on 15) The semiconductor device according to claim 15, wherein, in plan view, the wiring overlaps with a portion of the resistive element without overlapping with another portion of the resistive element along an extension direction of the straight portion. ### Claim 18 (depends on 15) The semiconductor device according to claim 15, wherein, in plan view, the wiring overlaps with a portion of the resistive element without overlapping with another portion of the resistive element in an arrangement direction of the plurality of straight portions. ### Claim 19 (depends on 11) The semiconductor device according to claim 11, wherein the multilayer wiring layer comprises a heater formed in a same layer as a layer in which the resistive element is formed, and wherein, in plan view, the heater overlaps with the optical waveguide.