# US 11,307,440 B2 · On-chip high capacitance termination for transmitters

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- Number: US 11,307,440 B2
- Document ID: US11307440B2
- Status: Granted
- Kind: B2
- Application number: 16/843,761
- Filed: 2020-04-08
- Published: 2020-11-26
- Granted: 2022-04-19
- Earliest claimed: 2016-07-22
- Assignees: Skorpios Technologies, Inc.
- Applicants: Skorpios Technologies, Inc.
- Inventors: Stephen B. Krasulick; Damien Lambert; Andrew Bonthron; Guoliang Li
- Web page: https://patentgrep.com/patent/US11307440B2

## CPC

- G02F 1/01708: {in an optical wavequide structure}
- G02F 1/0121: {Operation of devices; Circuit arrangements, not otherwise provided for in this subclass}
- G02F 1/017: Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- H03H 7/38: Impedance-matching networks
- G02F 1/0157: {using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]}
- G02F 2201/06: integrated waveguide
- G02F 2202/108: quantum wells
- H10W 72/884: {Die-attach connectors and bond wires}
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A modulator and a capacitor are integrated on a semiconductor substrate for modulating a laser beam. Integrating the capacitor on the substrate reduces parasitic inductance for high-speed optical communication.

## Claims

### Claim 1

A method for modulating a semiconductor modulator, the method comprising:
applying a modulation signal to a contact, wherein the contact is integrated on a substrate that is part of a platform;
transmitting the modulation signal to a semiconductor structure, wherein:
the semiconductor structure has a direct bandgap,
the semiconductor structure is integrated on the substrate,
the semiconductor structure is bonded within a recess of the platform,
the semiconductor structure comprises a first optical waveguide,
the first optical waveguide is a semiconductor waveguide, and
the modulation signal applied to the semiconductor structure modulates an optical beam in the first optical waveguide of the semiconductor structure to form a modulated beam;
shunting the semiconductor structure with a capacitor that is integrated on the substrate; and
transmitting the modulated beam from the first optical waveguide into a second optical waveguide, wherein:
the second optical waveguide is part of the platform, and
the second optical waveguide is a semiconductor waveguide.

### Claim 2 (depends on 1)

The method of claim 1, further comprising:
bonding the semiconductor structure to the platform;
forming the contact integrated on the substrate;
forming a ground plane integrated on the substrate, wherein the semiconductor structure is electrically between the contact and the ground plane; and
bonding the capacitor to the platform, wherein the capacitor is electrically between the contact and the ground plane.

### Claim 3 (depends on 1)

The method of claim 1, wherein:
the first optical waveguide is disposed in a first semiconductor material; and
the second optical waveguide is disposed in a second semiconductor material, different from the first semiconductor material.

### Claim 4 (depends on 3)

The method of claim 3, wherein a third optical waveguide is disposed in the second semiconductor material of the platform, and the method further comprises transmitting the optical beam from the third optical waveguide into the first optical waveguide.

### Claim 5 (depends on 4)

The method of claim 4, wherein the second semiconductor material is crystalline silicon.

### Claim 6 (depends on 5)

The method of claim 5, wherein the first semiconductor material is a III-V compound.

### Claim 7 (depends on 4)

The method of claim 4, further comprising expanding the optical beam using an optical coupler integrated on the substrate.

### Claim 8 (depends on 1)

The method of claim 1, wherein the modulation signal has a frequency between 2 and 100 gigahertz.

### Claim 9 (depends on 1)

The method of claim 1, wherein the capacitor is within 200 μm of the semiconductor structure.

### Claim 10 (depends on 1)

The method of claim 1, further comprising generating the optical beam using a laser integrated on the substrate.