# US 11,307,270 B2 · Spin valve with built-in electric field and spintronic device comprising the same

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- Number: US 11,307,270 B2
- Document ID: US11307270B2
- Status: Granted
- Kind: B2
- Application number: 16/824,253
- Filed: 2020-03-19
- Published: 2021-05-20
- Granted: 2022-04-19
- Earliest claimed: 2019-11-14
- Assignees: Institute of Semiconductors, Chinese Academy of Sciences
- Applicants: Institute of Semiconductors, Chinese Academy of Sciences
- Inventors: Kaiyou Wang; Wenkai Zhu; Ce Hu
- Web page: https://patentgrep.com/patent/US11307270B2

## CPC

- G01R 33/093: {using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00)}
- G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell}
- G11C 11/1675: {Writing or programming circuits or methods}
- G11C 11/5607: {using magnetic storage elements}
- H10N 50/10: Magnetoresistive devices
- H10N 50/80: Constructional details
- H10N 50/85: Materials of the active region
- G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12)
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

Exemplary embodiments of the present disclosure provide a spin valve and a spintronic device comprising the same. The spin valve may comprise two or more magnetic layers stacked in sequence, wherein the spin valve further comprises at least one pair of nonmagnetic semiconductor layers arranged between any two adjacent magnetic layers among the two or more magnetic layers, wherein a built-in electric field is formed between the at least one pair of nonmagnetic semiconductor layers.

## Claims

### Claim 1

A spin valve comprising two or more magnetic layers stacked, wherein the spin valve further comprises:
at least one pair of nonmagnetic semiconductor layers arranged between any two adjacent magnetic layers among the two or more magnetic layers, wherein a built-in electric field is formed between the at least one pair of nonmagnetic semiconductor layers,
wherein the at least one pair of nonmagnetic semiconductor layers is made of semiconductor materials with different conductivities.

### Claim 2 (depends on 1)

The spin valve according to claim 1, wherein at least one of the two or more magnetic layers has a fixed magnetization direction, and the other magnetic layer has an unfixed magnetization direction.

### Claim 3 (depends on 2)

The spin valve according to claim 2, further comprising a pinning layer arranged above or below the at least one magnetic layer and configured to fix the magnetization direction of the at least one magnetic layer.

### Claim 4 (depends on 1)

The spin valve according to claim 1, wherein each of the two or more magnetic layers is made of at least one of a magnetic metal, a magnetic semimetal, a magnetic semiconductor, a magnetic superconductor, a magnetic insulator, a ferromagnetic material, an antiferromagnetic material, an in-plane magnetic anisotropic material, a vertical magnetic anisotropic material, an organic magnetic material, an inorganic magnetic material, and a van der Waals magnetic material.

### Claim 5 (depends on 1)

The spin valve according to claim 1, further comprising one or more nonmagnetic spacer layer arranged between the two or more magnetic layers.

### Claim 6 (depends on 5)

The spin valve according to claim 5, wherein each of the one or more nonmagnetic spacer layers is made of at least one of a nonmagnetic semiconductor, a nonmagnetic insulator, a nonmagnetic semimetal, a nonmagnetic metal, and a nonmagnetic superconductor.

### Claim 7 (depends on 1)

A spintronic device comprising the spin valve according to claim 1.

### Claim 8 (depends on 7)

The spintronic device according to claim 7, wherein the spintronic device is a magnetic detector, a magnetic sensor, a magnetic memory, a spin logic device, a spin oscillator, a spin transistor, a spin diode, or a temperature sensor.