# US 11,307,200 B2 · Field effect transistor, device including the transistor, and methods of forming and using same

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- Number: US 11,307,200 B2
- Document ID: US11307200B2
- Status: Granted
- Kind: B2
- Application number: 16/697,769
- Filed: 2019-11-27
- Published: 2020-03-26
- Granted: 2022-04-19
- Earliest claimed: 2012-04-09
- Applicants: Bharath Takulapalli
- Inventors: Bharath Takulapalli
- Web page: https://patentgrep.com/patent/US11307200B2

## CPC

- G01N 33/54373: {involving physiochemical end-point determination, e.g. wave-guides, FETS, gratings}
- C12Q 1/6874: involving nucleic acid arrays, e.g. sequencing by hybridisation
- G01N 27/414: Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N 27/4145: {specially adapted for biomolecules, e.g. gate electrode with immobilised receptors}
- G01N 27/4146: {involving nanosized elements, e.g. nanotubes, nanowires}
- G01N 33/48721: {Investigating individual macromolecules, e.g. by translocation through nanopores (Coulter counters in general G01N15/12; fabrication methods for nanoscale apertures B81B1/00; sequencing of nucleic acids C12Q1/68)}
- G01N 33/54366: {Apparatus specially adapted for solid-phase testing}
- G01N 33/552: Glass or silica
- H10D 30/025: {of vertical IGFETs (of VDMOS H10D30/0291; of vertical TFTs H10D30/0318)}
- H10D 30/751: {having composition variations in the channel regions}
- H10D 62/118: {Nanostructure semiconductor bodies}
- H10D 62/126: {Top-view geometrical layouts of the regions or the junctions}
- H10P 50/642: {Chemical etching}
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)
- C12Q: MEASURING OR TESTING PROCESSES INVOLVING ENZYMES, NUCLEIC ACIDS OR MICROORGANISMS (immunoassay G01N33/53); COMPOSITIONS OR TEST PAPERS THEREFOR; PROCESSES OF PREPARING SUCH COMPOSITIONS; CONDITION-RESPONSIVE CONTROL IN MICROBIOLOGICAL OR ENZYMOLOGICAL PROCESSES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

The present disclosure provides an improved field effect transistor and device that can be used to sense and characterize a variety of materials. The field effect transistor and/or device including the transistor may be used for a variety of applications, including genome sequencing, protein sequencing, biomolecular sequencing, and detection of ions, molecules, chemicals, biomolecules, metal atoms, polymers, nanoparticles and the like.

## Claims

### Claim 1

A method of sensing an ion, atom, or molecule, the method comprising the steps of:
providing a device comprising:
a substrate comprising a first surface and an opposing second surface;
an etch region within a portion of the substrate;
an insulating region proximate the etch region;
a semiconductor layer overlying the insulating region;
a source region formed using a first portion of the semiconductor layer, the source region overlying the insulating region and overlying the first surface;
a drain region formed using a second portion of the semiconductor layer, the drain region overlying the insulating region and overlying the second surface; and
a channel formed using a third portion of the semiconductor layer,
wherein the channel spans between the source region and the drain region, and
wherein the device comprises a nanopore
providing material to be sensed;
passing the material through a nanopore of the device; and
detecting a variation in an electrical property of the device as the material passes through the nanopore.

### Claim 2 (depends on 1)

The method of claim 1, wherein the material to be sensed comprises one or more selected from the group consisting of a DNA molecule, a protein molecule, a peptide molecule, a polypeptide molecule, an RNA molecule, a synthetic oligo nucleotide molecule, and a synthetic peptide or polypeptide molecule.

### Claim 3 (depends on 1)

The method of claim 1, wherein the material to be sensed is selected from the group consisting of organic molecule, a nanoparticle, an ionic species, and a molecular species.

### Claim 4 (depends on 1)

The method of claim 1, wherein the material to be sensed is modified with at least one tag selected from the group consisting of metal species, metal-organic species, chemical modifiers, biomolecular tags, complementary hybridizing chain molecules, peptides, polypeptides, oligonucleotides, zinc fingers, nano particles, quantum dots, organic dyes, beads, nanowires, and nanotubes.

### Claim 5 (depends on 1)

The method of claim 1, wherein the device operates in potential coupled mode.

### Claim 6 (depends on 1)

The method of claim 1, wherein the device operates in charge coupled mode.

### Claim 7 (depends on 1)

The method of claim 1, wherein the device operates in inversion mode.

### Claim 8 (depends on 1)

The method of claim 1, wherein the device operates in a mode selected from one or more of: accumulation, depletion, partial depletion, full depletion, inversion and volume inversion mode.

### Claim 9 (depends on 1)

The method of claim 1, wherein the material comprises one or more of a modified DNA nucleotide and an unmodified DNA nucleotide.

### Claim 10 (depends on 1)

The method of claim 1, wherein the material comprises hybridized single-stranded DNA.

### Claim 11 (depends on 1)

The method of claim 1, wherein the material comprises chemically-modified single-stranded DNA.

### Claim 12 (depends on 11)

The method of claim 11, wherein a chemical modifier of the chemically-modified single-stranded DNA is selected from the group consisting of base selective DNA, organic molecule, peptide, protein molecules, and metal or metal-organic moieties.

### Claim 13 (depends on 1)

The method of claim 1, wherein the device operates as an n-channel device.

### Claim 14 (depends on 1)

The method of claim 1, wherein the device operates as a p-channel device.

### Claim 15 (depends on 1)

The method of claim 1, comprising detecting a variation in an electrical property of a second device as the material passes through a nanopore of the second device.

### Claim 16 (depends on 14)

The method of claim 14, wherein the device operates as an n-channel device and the second device operates as a p-channel device.

### Claim 17 (depends on 14)

The method of claim 14, wherein the device operates in accumulation mode and the second device operates in inversion mode.

### Claim 18 (depends on 1)

The method of claim 1, wherein the device further comprises a thin-film coating comprising one or more of dielectric, organic, inorganic, and biological material.

### Claim 19 (depends on 1)

The method of claim 1, wherein the etch region comprises a conical or pyramidal or spherical shape.

### Claim 20 (depends on 1)

The method of claim 1, wherein an inversion or an accumulation mode of the device is formed at the top surface of semiconductor layer at an interface with a solution comprising the material.