# US 11,306,394 B2 · Iridium precursors for ALD and CVD thin film deposition and uses thereof

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- Number: US 11,306,394 B2
- Document ID: US11306394B2
- Status: Granted
- Kind: B2
- Application number: 16/915,996
- Filed: 2020-06-29
- Published: 2020-12-17
- Granted: 2022-04-19
- Earliest claimed: 2017-04-07
- Assignees: Applied Materials, Inc.
- Applicants: Applied Materials, Inc.
- Inventors: Thomas Knisley
- Web page: https://patentgrep.com/patent/US11306394B2

## CPC

- C23C 16/45553: {characterized by the use of precursors specially adapted for ALD}
- C07F 15/004: {without a metal-carbon linkage}
- C23C 16/18: from metallo-organic compounds
- C23C 16/45527: {characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- C07F: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM (metal-containing porphyrins C07D487/22)

## Abstract

Metal coordination complexes comprising an iridium atom coordinated to at least one diazabutadiene based ligand having a structure represented by: where R1 and R4 are independently selected from the group consisting of C1-C4 alkyl and amino groups, and each of R2 and R3 are independently selected from the group consisting of H, C1-C3 alkyl, or amino groups are described. Processing methods using the metal coordination complexes are also described.

## Claims

### Claim 1

A metal coordination complex of the general formula Ir(DAD2)cXdYe, wherein:
DAD2 is a dianionic diazadiene based ligand
where R1 and R4 are independently selected from the group consisting of C1-C4 alkyl and amino groups;
each of R2 and R3 are independently selected from the group consisting of H, C1-C3 alkyl, or amino groups;
X is one or more of F−, Cl−, Br−, I−, OH− or CN−;
Y is a neutral ligand not based on DAD or a neutral DAD based ligand; and
c is 1-4, d is 1-8 and e is 0-8.

### Claim 2 (depends on 1)

The metal coordination complex of claim 1, wherein R1 and R4 are isopropyl groups and R2 and R3 are hydrogen.

### Claim 3 (depends on 1)

The metal coordination complex of claim 1, wherein the iridium atom has an oxidation state of neutral, +1, +2, +3, +4, +5, +6, +7, +8 or +9.

### Claim 4 (depends on 1)

The metal coordination complex of claim 1, wherein e is 0.

### Claim 5 (depends on 1)

The metal coordination complex of claim 1, wherein Y is one or more of H2O, NH3, CO, NO, NR″3, PR″3, dimethyl ether (DME), tetrahydrofuran (THF), tetramethylethylenediamine (TMEDA), acetonitrile, pyridine, ethylenediamine, or triphenylphosphine, and each R″ is independently H, C1-C6 alkyl or aryl group.

### Claim 6 (depends on 1)

A method of depositing an iridium containing film on a substrate surface, the method comprising exposing the substrate surface to the metal coordination complex of claim 1 and a reactant.

### Claim 7 (depends on 2)

A method of depositing an iridium containing film on a substrate surface, the method comprising exposing the substrate surface to the metal coordination complex of claim 2 and a reactant.

### Claim 8 (depends on 3)

A method of depositing an iridium containing film on a substrate surface, the method comprising exposing the substrate surface to the metal coordination complex of claim 3 and a reactant.

### Claim 9 (depends on 4)

A method of depositing an iridium containing film on a substrate surface, the method comprising exposing the substrate surface to the metal coordination complex of claim 4 and a reactant.

### Claim 10 (depends on 5)

A method of depositing an iridium containing film on a substrate surface, the method comprising exposing the substrate surface to the metal coordination complex of claim 5 and a reactant.