# US 11,305,986 B2 · Method of manufacturing semiconductor device, substrate processing apparatus and program > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,305,986 B2 - Document ID: US11305986B2 - Status: Granted - Kind: B2 - Application number: 16/797,322 - Filed: 2020-02-21 - Published: 2020-11-05 - Granted: 2022-04-19 - Earliest claimed: 2019-02-21 - Assignees: Kokusai Electric Corporation - Applicants: Kokusai Electric Corporation - Inventors: Takashi Yahata; Naofumi Ohashi; Tadashi Takasaki - Web page: https://patentgrep.com/patent/US11305986B2 ## CPC - B81C 1/00158: {Diaphragms, membranes (manufacture process for semi-permeable inorganic membranes B01D67/0039)} - B81C 1/00658: {Treatments for improving the stiffness of a vibrating element} - C23C 16/345: {Silicon nitride} - C23C 16/401: {containing silicon} - C23C 16/4586: {Elements in the interior of the support, e.g. electrodes, heating or cooling devices} - C23C 16/50: using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)} - C23C 16/5096: {Flat-bed apparatus} - C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} - C23C 28/04: only coatings of inorganic non-metallic material - C23C 28/042: {including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides} - G01N 29/2406: {Electrostatic or capacitive probes, e.g. electret or cMUT-probes} - H01J 37/32082: {Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence)} - H01J 37/32449: {Gas control, e.g. control of the gas flow} - H10P 14/6336: {in the presence of a plasma [PECVD]} - H10P 14/69215: {the material being a silicon oxide, e.g. SiO2} - H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz} - H10P 72/0432: {mainly by conduction} - H10P 72/0434: {mainly by convection} - H10P 72/7612: {characterised by lifting arrangements, e.g. lift pins} - H10P 72/7616: {characterised by a coating, a hardness or a material} - A61B 8/4483: {characterised by features of the ultrasound transducer} - B81B 2201/0271: Resonators; ultrasonic resonators - B81B 2203/0127: Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function - H01J 2237/3321: CVD [Chemical Vapor Deposition] - B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01) - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q) - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - A61B: DIAGNOSIS; SURGERY; IDENTIFICATION (usefulness limited to only animals A61D) - B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00) ## Abstract There is provided a technique for improving a resistance of a film to vibration in a semiconductor device having a vibrating film, including at least: forming a first silicon oxide film; forming a first silicon nitride film; forming a second silicon oxide film; and forming a second silicon nitride film, and each film formation is performed using a substrate processing apparatus configured to supply gas to a process chamber including upper and bottom electrodes, and selectively supply high frequency power or low frequency power to each of the upper and bottom electrodes by switching. ## Claims ### Claim 1 A method for manufacturing a semiconductor device having a vibratable insulating film, the method comprising at least: forming a first silicon oxide film; forming a first silicon nitride film; forming a second silicon oxide film; and forming a second silicon nitride film, as a formation of the insulating film, the formation of the second silicon oxide film comprising: supplying silicon-containing gas and oxygen-containing gas to a process chamber, and performing switching to supply low frequency power to a top electrode installed in the process chamber, and supply high frequency power to a bottom electrode installed in the process chamber, and the formation of the second silicon nitride film comprising: supplying silicon-containing gas and nitrogen-containing gas to the process chamber, and performing switching to supply low frequency power to the top electrode and supply high frequency power to the bottom electrode. ### Claim 2 (depends on 1) The method according to claim 1, wherein the formation of the first silicon oxide film comprises: supplying silicon-containing gas and oxygen-containing gas to the process chamber, and performing switching to supply high frequency power to the top electrode and supply low frequency power to the bottom electrode, and the formation of the first silicon nitride film comprises: supplying silicon-containing gas and nitrogen-containing gas to the process chamber, and performing switching to supply high frequency power to the top electrode and supply low frequency power to the bottom electrode. ### Claim 3 (depends on 2) The method according to claim 2, wherein the formation of the second silicon oxide film and the formation of the second silicon nitride film are repeated a plurality of number of times. ### Claim 4 (depends on 3) The method according to claim 3, comprising: forming a third silicon nitride film as the formation of the insulating film, separately from the formation of the first silicon nitride film and the formation of the second silicon nitride film, the formation of the third silicon nitride film comprising: supplying silicon-containing gas and nitrogen-containing gas to the process chamber, and performing switching to supply high frequency power to the top electrode and supply low frequency power to the bottom electrode. ### Claim 5 (depends on 4) The method according to claim 4, wherein when the formation of the second silicon oxide film and the formation of the second silicon nitride film are repeated a plurality of number of times, and when an uppermost layer has the same composition as the third silicon nitride film, the formation of the second silicon oxide film is performed to make each composition different. ### Claim 6 (depends on 5) The method according to claim 5, wherein after removing away a sacrificial layer formed to enable the insulating film to vibrate, through a hole provided in a coating film covering the sacrificial layer, a formation of the insulating film on the coating film is performed to seal the hole. ### Claim 7 (depends on 4) The method according to claim 4, wherein after removing away a sacrificial layer formed to enable the insulating film to vibrate, through a hole provided in a coating film covering the sacrificial layer, a formation of the insulating film on the coating film is performed to seal the hole. ### Claim 8 (depends on 3) The method according to claim 3, wherein after removing away a sacrificial layer formed to enable the insulating film to vibrate, through a hole provided in a coating film covering the sacrificial layer, a formation of the insulating film on the coating film is performed to seal the hole. ### Claim 9 (depends on 2) The method according to claim 2, wherein after removing away a sacrificial layer formed to enable the insulating film to vibrate, through a hole provided in a coating film covering the sacrificial layer, the formation of the insulating film on the coating film is performed to seal the hole. ### Claim 10 (depends on 1) The method according to claim 1, wherein the formation of the second silicon oxide film and the formation of the second silicon nitride film are repeated a plurality of number of times. ### Claim 11 (depends on 10) The method according to claim 10, comprising: forming a third silicon nitride film as the formation of the insulating film, separately from the formation of the first silicon nitride film and the formation of the second silicon nitride film, the formation of the third silicon nitride film comprising: supplying silicon-containing gas and nitrogen-containing gas to the process chamber, and performing switching to supply high frequency power to the top electrode and supply low frequency power to the bottom electrode. ### Claim 12 (depends on 11) The method according to claim 11, wherein when the formation of the second silicon oxide film and the formation of the second silicon nitride film are repeated a plurality of number of times, and when an uppermost layer has the same composition as the third silicon nitride film, the formation of the second silicon oxide film is performed to make each composition different. ### Claim 13 (depends on 11) The method according to claim 11, wherein after removing away a sacrificial layer formed to enable the insulating film to vibrate, through a hole provided in a coating film covering the sacrificial layer, the formation of the insulating film on the coating film is performed to seal the hole. ### Claim 14 (depends on 10) The method according to claim 10, wherein after removing away a sacrificial layer formed to enable the insulating film to vibrate, through a hole provided in a coating film covering the sacrificial layer, the formation of the insulating film on the coating film is performed to seal the hole. ### Claim 15 (depends on 1) The method according to claim 1, comprising: forming a third silicon nitride film as the formation of the insulating film, separately from the formation of the first silicon nitride film and the formation of the second silicon nitride film, the formation of the third silicon nitride film comprising: supplying silicon-containing gas and nitrogen-containing gas to the process chamber, and performing switching to supply high frequency power to the top electrode and supply low frequency power to the bottom electrode. ### Claim 16 (depends on 15) The method according to claim 15, wherein when the formation of the second silicon oxide film and the formation of the second silicon nitride film are repeated a plurality of number of times, and when an uppermost layer has the same composition as the third silicon nitride film, the formation of the second silicon oxide film is performed to make each composition different. ### Claim 17 (depends on 15) The method according to claim 15, wherein after removing away a sacrificial layer formed to enable the insulating film to vibrate, through a hole provided in a coating film covering the sacrificial layer, the formation of the insulating film on the coating film is performed to seal the hole. ### Claim 18 (depends on 1) The method according to claim 1, wherein after removing away a sacrificial layer formed to enable the insulating film to vibrate, through a hole provided in a coating film covering the sacrificial layer, the formation of the insulating film on the coating film is performed to seal the hole. ### Claim 19 A substrate processing apparatus, comprising: a process chamber that houses a workpiece; a first gas supplier that supplies silicon-containing gas to the process chamber; a second gas supplier that supplies oxygen-containing gas to the process chamber; a third gas supplier that supplies nitrogen-containing gas to the process chamber; a top electrode and a bottom electrode disposed in the process chamber; a high frequency power supplier that supplies high frequency power to the top electrode or the bottom electrode; a low frequency power supplier that supplies low frequency power to the top electrode or the bottom electrode; a switch that selects whether to supply high frequency power from the high frequency power supplier or low frequency power from the low frequency power supplier to each of the top electrode and the bottom electrode; and a controller that controls supply of gas by the first gas supplier, the second gas supplier, and the third gas supplier, and controls selective switching of power supply by the switch, and configured to perform at least: processing for forming a second silicon oxide film that configures an insulating film, by supplying silicon-containing gas and oxygen-containing gas to the process chamber, and performing switching to supply low frequency power to the top electrode and supply high frequency power to the bottom electrode; and processing for forming a second silicon nitride film that configures the insulating film, by supplying silicon-containing gas and nitrogen-containing gas to the process chamber, and performing switching to supply low frequency power to the top electrode and supply high frequency power to the bottom electrode, when forming a vibratable insulating film having the first silicon oxide film, the first silicon nitride film, the second silicon oxide film, and the second silicon nitride film on the workpiece. ### Claim 20 A non-transitory computer readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process comprising, at least a procedure for forming a first silicon oxide film, a procedure for forming a first silicon nitride film, a procedure for forming a second silicon oxide film, and a procedure for forming a second silicon nitride film as procedures for forming a vibratable insulating film, the procedure for forming the second silicon oxide film including: supplying silicon-containing gas and oxygen-containing gas to a process chamber, and performing switching to supply low frequency power to a top electrode installed in the process chamber and supply high frequency power to a bottom electrode installed in the process chamber, and the procedure for forming the second silicon nitride film including: supplying silicon-containing gas and nitrogen-containing gas to the process chamber and performing switching to supply low frequency power to the top electrode and supply high frequency power to the bottom electrode.