# US 11,305,365 B2 · Logic switching device and method of manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,305,365 B2 - Document ID: US11305365B2 - Status: Granted - Kind: B2 - Application number: 16/881,377 - Filed: 2020-05-22 - Published: 2020-09-10 - Granted: 2022-04-19 - Earliest claimed: 2018-08-20 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Jinseong Heo; Yunseong Lee; Sanghyun Jo - Web page: https://patentgrep.com/patent/US11305365B2 ## CPC - B23K 3/08: Auxiliary devices therefor - H10D 64/689: {having ferroelectric layers} - B23K 3/0607: {Solder feeding devices} - H10B 51/00: Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors - H10B 51/30: characterised by the memory core region - H10D 30/0415: {of FETs having ferroelectric gate insulators} - H10D 30/701: {IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs} - H10D 64/683: {being parallel to the channel plane} - H10D 64/685: {being perpendicular to the channel plane} - H10W 72/30: Die-attach connectors - B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10B: ELECTRONIC MEMORY DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract Provided are a logic switching device and a method of manufacturing the same. The logic switching device may include a domain switching layer adjacent to a gate electrode. The domain switching layer may include a ferroelectric material region and an anti-ferroelectric material region. The domain switching layer may be a non-memory element. The logic switching device may include a channel, a source and a drain both connected to the channel, the gate electrode arranged to face the channel, and the domain switching layer provided between the channel and the gate electrode. ## Claims ### Claim 1 A logic switching device comprising: a channel; a source and a drain both connected to the channel; a gate electrode arranged to face the channel; and a domain switching layer between the channel and the gate electrode, wherein the domain switching layer comprises at least one structure including at least one ferroelectric material region comprising a ferroelectric domain and at least one anti-ferroelectric material region comprising an anti-ferroelectric domain, and wherein the ferroelectric material region has a negative capacitance, the anti-ferroelectric material region has a positive capacitance and the sum of the two capacitances is positive, respectively during the logic switching device operation. ### Claim 2 (depends on 1) The logic switching device of claim 1, wherein the domain switching layer comprises the at least one ferroelectric material region and the at least one anti-ferroelectric material region are arranged in a direction parallel to the gate electrode. ### Claim 3 (depends on 1) The logic switching device of claim 1, wherein the domain switching layer comprises the at least one ferroelectric material region and the at least one anti-ferroelectric material region are arranged in a direction perpendicular to the gate electrode. ### Claim 4 (depends on 1) The logic switching device of claim 1, wherein the domain switching layer comprises two structures, a first structure including the at least one ferroelectric material region and the at least one anti-ferroelectric material region are arranged in a direction parallel to the gate electrode and a second structure including at least one ferroelectric material region and at least one anti-ferroelectric material region are arranged in a direction perpendicular to the gate electrode. ### Claim 5 (depends on 1) The logic switching device of claim 1, wherein the at least one ferroelectric material region and the at least one anti-ferroelectric material region comprise an identical base material, but have different crystalline phases. ### Claim 6 (depends on 1) The logic switching device of claim 1, wherein the at least one ferroelectric material region has an orthorhombic crystalline phase, and the at least one anti-ferroelectric material region has a tetragonal crystalline phase. ### Claim 7 (depends on 1) The logic switching device of claim 1, wherein the at least one ferroelectric material region and the at least one anti-ferroelectric material region have different doping concentrations. ### Claim 8 (depends on 1) The logic switching device of claim 1, wherein the at least one ferroelectric material region and the at least one anti-ferroelectric material region comprise different dopants. ### Claim 9 (depends on 1) The logic switching device of claim 1, wherein at least one of the at least one ferroelectric material region and the at least one anti-ferroelectric material region comprises at least one selected from a group consisting of a Hf-based oxide and a Zr-based oxide. ### Claim 10 (depends on 1) The logic switching device of claim 1, wherein at least one of the at least one ferroelectric material region and the at least one anti-ferroelectric material region comprises a dopant, wherein the dopant comprises at least one selected from a group consisting of silicon, aluminum, zirconium, yttrium, lanthanum, gadolinium, strontium, and hafnium . ### Claim 11 (depends on 1) The logic switching device of claim 1, wherein a volume ratio of the at least one ferroelectric material region to the at least one anti-ferroelectric material region in the domain switching layers is in a range from about 10:90 to about 90:10. ### Claim 12 (depends on 1) The logic switching device of claim 1, wherein the domain switching layer is in direct contact with the channel. ### Claim 13 (depends on 1) The logic switching device of claim 1, further comprising: an insulating layer between the channel and the domain switching layer. ### Claim 14 (depends on 1) The logic switching device of claim 1, further comprising: an insulating layer between the channel and the domain switching layer; and a conductive layer between the insulating layer and the domain switching layer. ### Claim 15 (depends on 1) The logic switching device of claim 1, wherein the channel comprises at least one a selected from a group consisting of silicon, germanium, silicon-germanium, a Group III-V semiconductor, an oxide semiconductor, a nitride semiconductor, an oxynitride semiconductor, a two-dimensional material, a quantum dot, and an organic semiconductor. ### Claim 16 (depends on 1) The logic switching device of claim 1, wherein the domain switching layer has a non-hysteretic behavior characteristic at a polarization change according to an external electric field. ### Claim 17 A logic switching device comprising: a channel; a source and a drain both connected to the channel; a gate electrode arranged to face the channel; and a domain switching layer between the channel and the gate electrode, wherein the domain switching layer has a non-hysteretic behavior characteristic at a polarization change according to an external electric field, and comprises at least one structure including at least one ferroelectric material region comprising a ferroelectric domain and at least one anti-ferroelectric material region comprising an anti-ferroelectric domain, and wherein the domain switching layer comprise multiple regions of at least one of the ferroelectric material region or the anti-ferroelectric region. ### Claim 18 (depends on 17) The logic switching device of claim 17, wherein the domain switching layer comprises the at lest one ferroelectric material region and the at least one anti-ferroelectric material region are arranged in a direction parallel or perpendicular to the gate electrode. ### Claim 19 A logic switching device comprising: a channel; a source and a drain both connected to the channel; a gate electrode arranged to face the channel; and a domain switching layer between the channel and the gate electrode, wherein the domain switching layer is a non-memory element and comprises at least one structure including at least one ferroelectric material region comprising a ferroelectric domain and at least one anti-ferroelectric material region comprising an anti-ferroelectric domain, and wherein the logic switching device has a matched capacitance. ### Claim 20 (depends on 19) The logic switching device of claim 19, wherein the domain switching layer has a non-hysteretic behavior characteristic at a polarization change according to an external electric field.