# US 11,305,263 B2 · Method for preparing a supported carbon catalyst, supported carbon catalyst and use thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,305,263 B2 - Document ID: US11305263B2 - Status: Granted - Kind: B2 - Application number: 16/643,953 - Filed: 2019-04-30 - Published: 2021-08-19 - Granted: 2022-04-19 - Earliest claimed: 2019-04-30 - Assignees: Dalian Institute of Chemical Physics, Chinese Academy of Sciences; Formosa Plastics Corporation - Applicants: Dalian Institute of Chemical Physics, Chinese Academy of Sciences; Formosa Plastics Corporation - Inventors: Jinming Xu; Sisi Fan; Yanqiang Huang; Tao Zhang; Chin Lien Huang; Wan Tun Hung; Yu Cheng Chen; Chien Hui Wu; Ya Wen Cheng; Ming Hsien Wen; Chao Chin Chang; Tsao Cheng Huang - Web page: https://patentgrep.com/patent/US11305263B2 ## CPC - B01J 27/20: Carbon compounds - B01J 37/0209: {involving a reaction between the support and a fluid} - B01J 37/0219: {the coating containing organic compounds} - B01J 37/349: {making use of flames, plasmas or lasers} - C07C 5/327: Formation of non-aromatic carbon-to-carbon double bonds only - C07C 17/02: to unsaturated hydrocarbons - C07C 17/07: by addition of hydrogen halides - C07C 17/08: to unsaturated hydrocarbons - C07C 17/23: by dehalogenation - C07C 17/25: by splitting-off hydrogen halides from halogenated hydrocarbons - C07C 15/46: Styrene; Ring-alkylated styrenes - C07C 2527/20: Carbon compounds - B01J: CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS - C07C: ACYCLIC OR CARBOCYCLIC COMPOUNDS ## Abstract A method for preparing a supported carbon catalyst, the method includes at least the following steps: contacting a gas containing an organic silicon source with a silicon oxide-based material to obtain a precursor; contacting the precursor with a gas containing an organic carbon source to obtain the supported carbon catalyst. The temperature and energy consumption of the chemical vapor deposition of heteroatom-containing carbon material on silica-based materials can be greatly reduced in this method, and the cost of the catalyst can be effectively reduced. ## Claims ### Claim 1 A method for preparing a supported carbon catalyst, wherein the method comprises: Step (1): contacting a gas containing an organic silicon source with a silicon oxide-based material to obtain a precursor; Step (2): contacting the precursor with a gas containing an organic carbon source to obtain the supported carbon catalyst, wherein the precursor obtained in step (1) contacts with the gas containing the organic carbon source at a contact temperature in a range from 500° C. to 1000° C. for 0.1 hour to 10 hours. ### Claim 2 (depends on 1) The method according to claim 1, wherein the organic silicon source in the step (1) is at least one selected from the group consisting of a compound with a chemical formula shown in formula I and a compound with a chemical formula shown in formula II: wherein R1, R2, R3 and R4 are each independently selected from the group consisting of hydrogen, a C1 to C12 hydrocarbyl group, a C1 to C12 substituted hydrocarbyl group, a C1 to C5 hydrocarbyloxy group, a C1 to C5 alkylacyloxy group, halogen and amino; and at least one of R1, R2, R3 and R4 is a C1 to C12 hydrocarbyl group or a C1 to C12 substituted hydrocarbyl group; and at least one of R1, R2, R3 and R4 is hydrogen, a C1 to C5 hydrocarbyloxy group, a C1 to C5 alkylacyloxy, halogen or amino; wherein A is O or NH; R5, R6, R7, R8, R9 and R10 are each independently selected from the group consisting of hydrogen, a C1 to C12 hydrocarbyl group, a C1 to C12 substituted hydrocarbyl group, a C1 to C5 hydrocarbyloxy group, a C1 to C5 alkylacyloxy group, halogen or amino; and at least one of R5, R6 and R7 is a C1 to C12 hydrocarbyl group or a C1 to C12 substituted hydrocarbyl group; and at least one of R8, R9 and R10 is a C1 to C12 hydrocarbyl group or a C1 to C12 substituted hydrocarbyl group. ### Claim 3 (depends on 2) The method according to claim 2, wherein a substituent is contained in the substituted hydrocarbyl group; the substituent is at least one selected from the group consisting of halogen, amino, epoxyethyl, sulfydryl, cyano, isocyanate group, and ethylenediamine. ### Claim 4 (depends on 1) The method according to claim 1, wherein the organic silicon source in step (1) is least one selected from the group consisting of dichlorodimethylsilane, hexamethyldisiloxane, trimethylchlorosilane, phenyltrichlorosilane and dimethoxydimethylsilane. ### Claim 5 (depends on 1) The method according to claim 1, wherein the gas containing the organic silicon source in step (1) contains or does not contain an inactive gas; the inactive gas is at least one selected from the group consisting of nitrogen, argon gas and helium gas. ### Claim 6 (depends on 1) The method according to claim 1, wherein the silicon oxide-based material in step (1) is porous silicon dioxide. ### Claim 7 (depends on 1) The method according to claim 1, wherein the gas containing the organic silicon source in step (1) contacts with the silicon oxide-based material at a contact temperature in a range from 100° C. to 500° C. for 0.1 hour to 10 hours. ### Claim 8 (depends on 1) The method according to claim 1, wherein the gas containing the organic silicon source in step (1) contacts with the silicon oxide-based material at a contact temperature in a range from 200° C. to 450° C. for 0.2 hour to 4 hours. ### Claim 9 (depends on 1) The method according to claim 1, wherein the mass percentage of the silicon oxide-based material in the precursor is in a range from 80 wt % to 98 wt %. ### Claim 10 (depends on 1) The method according to claim 1, wherein the mass percentage of the silicon oxide-based material in the precursor is in a range from 90 wt % to 97 wt %. ### Claim 11 (depends on 1) The method according to claim 1, wherein the organic carbon source in the step (1) is at least one of a C1 to C18 organic compound; the organic compound contains at least one selected from the group consisting of nitrogen, oxygen, boron, phosphorus, and sulfur. ### Claim 12 (depends on 1) The method according to claim 1, wherein the organic carbon source in step (2) is at least one selected from the group consisting of nitrile compounds, pyridine compounds, organic phosphine compounds, organoboron compounds, thiophene compounds, phenol compounds, and alcohol compounds. ### Claim 13 (depends on 1) The method according to claim 1, wherein the gas containing the organic carbon source in step (2) contains an inactive gas; the inactive gas is at least one selected from the group consisting of nitrogen, argon gas and helium gas. ### Claim 14 (depends on 1) The method according to claim 1, wherein the precursor in step (2) contacts with the gas containing the organic carbon source at a contact temperature in a range from 600° C. to 900° C. for 0.1 hour to 4 hours. ### Claim 15 (depends on 1) The method according to claim 1, wherein the mass percentage of the silicon oxide-based material in the supported carbon catalyst is in a range from 60 wt % to 95 wt %. ### Claim 16 (depends on 1) The method according to claim 1, wherein the mass percentage of the silicon oxide-based material in the supported carbon catalyst is in a range from 75 wt % to 93 wt %.