# US 11,299,804 B2 · Method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus

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- Number: US 11,299,804 B2
- Document ID: US11299804B2
- Status: Granted
- Kind: B2
- Application number: 16/554,243
- Filed: 2019-08-28
- Published: 2020-03-26
- Granted: 2022-04-12
- Earliest claimed: 2018-09-26
- Assignees: Kokusai Electric Corporation
- Applicants: Kokusai Electric Corporation
- Inventors: Yuji Takebayashi; Kosuke Takagi; Atsushi Hirano; Ryuichi Nakagawa; Noriyuki Isobe
- Web page: https://patentgrep.com/patent/US11299804B2

## CPC

- C23C 16/4402: {Reduction of impurities in the source gas}
- C23C 16/20: Deposition of aluminium only
- C23C 16/403: {of aluminium, magnesium or beryllium}
- C23C 16/4405: {Cleaning of reactor or parts inside the reactor by using reactive gases}
- C23C 16/4408: {by purging residual gases from the reaction chamber or gas lines}
- C23C 16/4412: {Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps}
- C23C 16/45523: {Pulsed gas flow or change of composition over time}
- C23C 16/45574: {Nozzles for more than one gas}
- C23C 16/45578: {Elongated nozzles, tubes with holes}
- C23C 16/45597: {Reactive back side gas}
- C23C 16/4584: {the substrate being rotated}
- C23C 16/46: characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence)
- C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)}
- C23C 16/56: After-treatment
- H10P 14/6334: {using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329)}
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H10P 14/69391: {the material containing aluminium, e.g. Al2O3}
- H10P 72/0602: {Temperature monitoring}
- H10P 72/0604: {Process monitoring, e.g. flow or thickness monitoring}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Described herein is a technique capable of suppressing deposits. According to one aspect of the technique, there is provided a method including: (a) supplying a source gas into a process chamber through a source gas nozzle while heating the process chamber; and (b) supplying a reactive gas into the process chamber, wherein (a) and (b) are alternately performed one by one to form a film on the plurality of the substrates while satisfying conditions including: (i) a supply time of the source gas in (a) in each cycle is 20 seconds or less; (ii) a pressure of the source gas in the source gas nozzle in (a) is 50 Pa or less; (iii) an inner temperature of the process chamber in (a) is 500° C. or less; and (iv) number of cycles performed continuously to form the film on the plurality of the substrates is 100 cycles or less.

## Claims

### Claim 1

A method of manufacturing a semiconductor device comprising:
(a) supplying a source gas into a process chamber through a source gas nozzle while heating the process chamber in which a plurality of substrates is stacked, wherein the source gas nozzle extends along a stacking direction of the plurality of the substrates and is provided with a plurality of gas supply holes opened at positions corresponding to a stacking region of the plurality of the substrates; and
(b) supplying a reactive gas capable of reacting with the source gas into the process chamber,
wherein a cycle, in which (a) and (b) are alternately performed one by one, is performed once or more to form a film on the plurality of the substrates while satisfying conditions comprising:
(i) a supply time of the source gas in (a) in each cycle is 20 seconds or less;
(ii) a pressure of the source gas in the source gas nozzle in (a) is 50 Pa or less;
(iii) an inner temperature of the process chamber in (a) is 500° C. or less; and
(iv) number of cycles performed continuously to form the film on the plurality of the substrates is 100 cycles or less.

### Claim 2 (depends on 1)

The method of claim 1, wherein the reactive gas is supplied into the source gas nozzle after (a) is performed so that an inner wall of the source gas nozzle is pre-coated.

### Claim 3 (depends on 2)

The method of claim 2, wherein a flow rate of the reactive gas is 30 slm or less.

### Claim 4 (depends on 1)

The method of claim 1, wherein an inert gas is supplied into the source gas nozzle, and the reactive gas supplied into the process chamber flows backward into the source gas nozzle through the plurality of the gas supply holes of the source gas nozzle in (b).

### Claim 5 (depends on 4)

The method of claim 4, wherein a ratio of a flow rate of the inert gas supplied into the source gas nozzle to a flow rate of the reactive gas flowing backward into the source gas nozzle is adjusted in (b).

### Claim 6 (depends on 1)

The method of claim 1, wherein the reactive gas supplied into the process chamber flows backward into the source gas nozzle by stopping the supplying of the inert gas into the source gas nozzle in (b).

### Claim 7 (depends on 1)

The method of claim 1, wherein an inert gas is supplied into the source gas nozzle in (b), and a flow rate of the inert gas supplied into the source gas nozzle is lower than a flow rate of the reactive gas flowing backward into the source gas nozzle in (b).

### Claim 8 (depends on 1)

The method of claim 1, wherein the supply time of the source gas in (a) in each cycle is 2 seconds or more, the pressure of the source gas in the source gas nozzle in (a) is 10 Pa or more, the inner temperature of the process chamber in (a) is 400° C. or more, and the number of the cycles performed continuously to form the film on the plurality of the substrates is one or more.

### Claim 9 (depends on 1)

The method of claim 1, wherein the source gas comprises a metal-containing gas and the reactive gas comprises an oxygen-containing gas.