# US 11,299,801 B2 · Structure and method to fabricate highly reactive physical vapor deposition target

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- Number: US 11,299,801 B2
- Document ID: US11299801B2
- Status: Granted
- Kind: B2
- Application number: 16/682,498
- Filed: 2019-11-13
- Published: 2020-03-12
- Granted: 2022-04-12
- Earliest claimed: 2017-04-26
- Assignees: International Business Machines Corporation
- Applicants: International Business Machines Corporation
- Inventors: Stephen L. Brown; Bruce B. Doris; Mark C. Reuter
- Web page: https://patentgrep.com/patent/US11299801B2

## CPC

- C23C 14/3414: {Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy}
- C23C 14/06: characterised by the coating material ({C23C14/0021} , C23C14/04 take precedence)
- C23C 14/081: {of aluminium, magnesium or beryllium}
- H01J 37/3426: {Material}
- H01J 37/3491: {Manufacturing of targets}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

A physical vapor deposition (PVD) target that includes a body composed of material that is reactive with an oxygen containing atmosphere; and a non-reactive cap layer encapsulating at least a sputter surface of the body. The non-reactive cap layer is a barrier obstructing the diffusion of oxygen containing species to the body of the PVD target.

## Claims

### Claim 1

A target comprising:
a body comprised of a deposition material; and
a non-reactive cap layer encapsulating at least a portion of the body, wherein a composition for the non-reactive cap layer is selected from the group consisting of titanium oxide (TiO2), tantalum nitride (TaN), chromium oxide, tantalum oxide, carbon, graphene, diamond like carbon (DLC), amorphous carbon and combinations thereof.

### Claim 2 (depends on 1)

The target of claim 1, wherein a composition for the deposition body is selected from the group consisting of magnesium, magnesium oxide, lanthanum and combinations thereof.

### Claim 3 (depends on 1)

The target of claim 1, wherein the non-reactive cap layer has a thickness ranging from 1 nm to 30 nm.

### Claim 4 (depends on 3)

The target of claim 3, wherein the non-reactive cap layer is present on sidewalls of the body as well as an upper surface of said body.

### Claim 5 (depends on 4)

The target of claim 4, wherein thickness of the non-reactive cap layer is conformal on said sidewalls and said upper surface of said body.

### Claim 6

A method for forming a target comprising:
providing a target body comprised of deposition material; and
depositing a non-reactive cap layer encapsulating at least a surface of the body, wherein a composition for the non-reactive cap layer is selected from the group consisting of titanium oxide (TiO2), tantalum nitride (TaN), chromium oxide, tantalum oxide, carbon, graphene, diamond like carbon (DLC), amorphous carbon and combinations thereof.

### Claim 7 (depends on 6)

The method of claim 6, wherein a composition for the deposition body is selected from the group consisting of magnesium, magnesium oxide, lanthanum and combinations thereof.

### Claim 8 (depends on 7)

The method of claim 7, wherein said depositing the non-reactive cap layer comprises depositing a metal selected from the group consisting of aluminum, titanium, chromium, tantalum, and combinations thereof; and oxidizing the metal to provide said non-reactive cap layer having a composition selected from the group consisting of titanium oxide (TiO2), aluminum oxide (Al2O3), chromium oxide, tantalum oxide, and combinations thereof.

### Claim 9 (depends on 8)

The method of claim 8, wherein the metal layer for depositing the non-reactive cap layer is formed by electroplating, plating, chemical vapor deposition, physical vapor deposition, sublimation or a combination thereof.

### Claim 10 (depends on 9)

The method of claim 9, wherein said oxidizing is self-limiting in thickness.

### Claim 11 (depends on 10)

The method of claim 10, wherein the thickness ranges from 1 nm to 30 nm.

### Claim 12 (depends on 6)

The method of claim 6, wherein the non-reactive cap layer is deposited using chemical vapor deposition.

### Claim 13

A deposition method comprising:
providing a target having a body composed of a deposition material and a non-reactive cap layer encapsulating the body, wherein a composition for the non-reactive cap layer is selected from the group consisting of titanium oxide (TiO2), tantalum nitride (TaN), chromium oxide, tantalum oxide, carbon, graphene, diamond like carbon (DLC), amorphous carbon and combinations thereof, and combinations thereof;
positioning the target within a deposition chamber;
exposing a surface of the body of the target underlying the non-reactive cap layer; and
depositing the deposition material of the body of the target onto a deposition surface of an article to be coated.

### Claim 14 (depends on 13)

The method of claim 13, wherein a sequence of said steps of said exposing a surface of the body of the target underlying the non-reactive cap layer and said depositing the deposition material of the body of the target onto a deposition surface of an article is performed without breaking the atmosphere of the deposition chamber.

### Claim 15 (depends on 13)

The deposition method of claim 13, wherein a composition for the deposition material is selected from the group consisting of magnesium, magnesium oxide, lanthanum and combinations thereof.

### Claim 16 (depends on 13)

The deposition method of claim 13, wherein the non-reactive cap layer has a thickness ranging from 1 nm to 30 nm.

### Claim 17 (depends on 16)

The deposition method of claim 16, wherein the non-reactive cap layer has a conformal thickness.

### Claim 18 (depends on 17)

The deposition method of claim 17, wherein the non-reactive cap layer is present on an upper surface of said body of said target.

### Claim 19 (depends on 18)

The deposition method of claim 18, wherein the non-reactive cap layer is present on a sidewall surface of said body of said target.

### Claim 20 (depends on 19)

The deposition method of claim 19, wherein the non-reactive cap layer is present on a base surface of said body of said target.
