# US 11,299,672 B2 · Near-infrared luminescent material and light-emitting device prepared therefrom > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,299,672 B2 - Document ID: US11299672B2 - Status: Granted - Kind: B2 - Application number: 16/612,315 - Filed: 2018-09-13 - Published: 2020-11-19 - Granted: 2022-04-12 - Earliest claimed: 2018-02-12 - Assignees: Grirem Advanced Materials Co., Ltd.; Guoke Re Advanced Materials Co., Ltd. - Applicants: Grirem Advanced Materials Co., Ltd.; Guoke Re Advanced Materials Co., Ltd. - Inventors: Ronghui Liu; Xiaoxia Chen; Yuanhong Liu; Yanfeng Li; Xiaole Ma - Web page: https://patentgrep.com/patent/US11299672B2 ## CPC - C09K 11/06: containing organic luminescent materials - C09K 11/7776: {Vanadates; Chromates; Molybdates; Tungstates} - H10H 20/8512: {Wavelength conversion materials} - H10H 20/8513: {having two or more wavelength conversion materials} - C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract The near-infrared luminescent material is capable of efficiently emitting near-infrared light with a peak wavelength of 900 nm to 1,100 nm under an effective excitation wavelength of 250 nm to 750 nm. The luminescent material has the characteristics of wide excitation emission wavelength, high luminous efficiency, uniform luminescence, no impurity phase, high stability, simple preparation and the like. The present invention further provides the light-emitting device prepared from the near-infrared luminescent material. The luminescent material and the light-emitting device provided by the present invention solve the problems of poor stability, low luminous efficiency, high preparation cost and the like of a conventional near-infrared luminescent material and light-emitting device, and have a favorable application prospect. ## Claims ### Claim 1 A near-infrared luminescent material, comprising an inorganic compound with a chemical formula of RuQvOw:Crx, Yby, wherein R is at least one of Y, Lu and Tb; Q is Ga and/or Al; and the parameters u, v, w, x and y meet the following conditions: 2.5≤u≤3.5, 3.5≤v≤5.5, 11.25≤w≤13.25, 0.02≤x≤0.30, and 0.02≤y≤0.30; the near-infrared luminescent material is garnet structure; the near-infrared luminescent material has a peak-peak intensity A in an emission spectrum within the range of 900 nm to 1,100 nm, and a peak-peak intensity B in an emission spectrum within the range of 700 nm to 750 nm, wherein 0.95≤A/(A+B)≤0.99. ### Claim 2 (depends on 1) The near-infrared luminescent material according to claim 1, wherein Q is Ga. ### Claim 3 (depends on 1) The near-infrared luminescent material according to claim 1, wherein Q is a combination of Ga and Al, a mole percent of Ga to Al is j, and 80%≤j<100%. ### Claim 4 (depends on 1) The near-infrared luminescent material according to claim 1, wherein R is Y, Tb or Lu; or R is a combination of Y and Tb or a combination of Y and Lu. ### Claim 5 (depends on 1) The near-infrared luminescent material according to claim 1, wherein R comprises Tb and/or Lu. ### Claim 6 (depends on 1) The near-infrared luminescent material according to claim 1, wherein the parameters x and y meet the following condition: 0.15≤y/x≤2, preferably, 0.3≤y/x≤1. ### Claim 7 (depends on 1) The near-infrared luminescent material according to claim 1, wherein the parameters u, v, x and y meet the following condition: 1.2≤(v+x)/(u+y)≤1.65, preferably, 1.45≤(v+x)/(u+y)≤1.60. ### Claim 8 (depends on 1) The near-infrared luminescent material according to claim 1, further comprising Ba and/or F. ### Claim 9 (depends on 1) A light-emitting device, comprising a phosphor and an excitation light source, wherein the phosphor comprises the near-infrared luminescent material of claim 1. ### Claim 10 (depends on 1, 9) The light-emitting device according to claim 9, comprising a semiconductor chip, a light conversion portion I and a light conversion portion II, wherein the light conversion portion I absorbs primary light emitted by the semiconductor chip and converts the absorbed primary light into secondary light with a larger wavelength; the light conversion portion II absorbs the primary light from the semiconductor chip and the secondary light emitted by the light conversion portion I and converts the absorbed light into thrice light with a larger wavelength; and the light conversion portion I at least comprises a luminescent material I, and the light conversion portion II at least comprises the near-infrared luminescent material of claim 1. ### Claim 11 (depends on 10) The light-emitting device according to claim 10, wherein under excitation of the semiconductor chip, the luminescent material I is capable of emitting light with a peak wavelength of 580 nm to 650 nm. ### Claim 12 (depends on 10) The light-emitting device according to claim 10, wherein the luminescent material I is one or two of luminescent materials with following general formulas: MmAlnSibNc:Eud and MeSifNg:Eun;M is selected from Ca and/or Sr; and the parameters m, a, b, c, d, e, f, g and n meet the following conditions: 0.8≤m≤1.2, 0.8≤a≤1.2, 0.8≤b≤1.2, 2≤c≤4, 0.0001≤d≤0.1, 1.8≤e≤2.2, 4≤f≤6, 7≤g≤9, and 0.0001≤n≤0.1. ### Claim 13 (depends on 1) The light-emitting device according to claim 1, wherein the luminescent material I adopts a crystal structure as CaAlSiN3 or Sr2Si5N8. ### Claim 14 (depends on 1) The light-emitting device according to claim 1, wherein in the luminescent material 1, M is a combination of Ca and Sr, a mole percent of Sr to M is z, and 80%≤z<100%. ### Claim 15 (depends on 1) The light-emitting device according to claim 1, wherein the semiconductor chip (2) has an emission peak wavelength range of 350 nm to 500 nm and/or 550 nm to 700 nm, preferably 430 nm to 465 nm. ### Claim 16 (depends on 2) The near-infrared luminescent material according to claim 2, wherein R is Y, Tb or Lu; or R is a combination of Y and Tb or a combination of Y and Lu. ### Claim 17 (depends on 3) The near-infrared luminescent material according to claim 3, wherein R is Y, Tb or Lu; or R is a combination of Y and Tb or a combination of Y and Lu. ### Claim 18 (depends on 2) The near-infrared luminescent material according to claim 2, wherein R comprises Tb and/or Lu. ### Claim 19 (depends on 3) The near-infrared luminescent material according to claim 3, wherein R comprises Tb and/or Lu. ### Claim 20 (depends on 2) The near-infrared luminescent material according to claim 2, wherein the parameters x and y meet the following condition: 0.15≤y/x≤2, preferably, 0.3≤y/x≤1.