# US 11,298,795 B2 · Polishing pad, process for preparing the same, and process for preparing a semiconductor device using the same

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- Number: US 11,298,795 B2
- Document ID: US11298795B2
- Status: Granted
- Kind: B2
- Application number: 17/002,468
- Filed: 2020-08-25
- Published: 2021-04-29
- Granted: 2022-04-12
- Earliest claimed: 2019-10-29
- Assignees: SKC solmics Co., Ltd.
- Applicants: SKC solmics Co., Ltd.
- Inventors: Sunghoon Yun; Hye Young Heo; Jang Won Seo
- Web page: https://patentgrep.com/patent/US11298795B2

## CPC

- B24B 37/24: characterised by the composition or properties of the pad materials
- B24B 37/26: characterised by the shape of the lapping pad surface, e.g. grooved
- B24D 11/00: Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
- B24D 11/003: {without embedded abrasive particles (B24D11/005 takes precedence)}
- H10P 52/403: {of conductive or resistive materials}
- B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24D: TOOLS FOR GRINDING, BUFFING OR SHARPENING (abrading-bodies specially designed for tumbling apparatus, e.g. abrading-balls B24B31/14; honing tools B24B33/08; lapping tools B24B37/11)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, a process for preparing the same, and a process for preparing a semiconductor device using the same. In the polishing pad according to the embodiment, the size (or diameter) and distribution of a plurality of pores are adjusted, whereby the polishing performance such as polishing rate and within-wafer non-uniformity can be further enhanced.

## Claims

### Claim 1

A polishing pad, which comprises a polishing layer comprising a plurality of pores,
wherein the total area of the pores per unit area (mm2) of the polishing surface is 40% to 60%,
the Dq value represented by the following Equation 1 is 5 μm to 15 μm,
the Dsk value represented by the following Equation 2 is greater than 0.3 to less than 1, and
the Dku value represented by the following Equation 3 is greater than 1 to less than 5:
D
q
=
∑
i
=
1
n
⁢
⁢
d
i
2
n
[
Equation
⁢
⁢
1
]
D
sk
=
1
nD
q
3
⁢
(
∑
i
=
1
n
⁢
⁢
d
i
3
)
[
Equation
⁢
⁢
2
]
D
ku
=
1
nD
q
4
⁢
(
∑
i
=
1
n
⁢
⁢
d
i
4
)
[
Equation
⁢
⁢
3
]
in Equations 1 to 3, d is a value obtained by subtracting the number average diameter of the plurality of pores from each pore diameter, and n is the total number of pores per unit area (mm2).

### Claim 2 (depends on 1)

The polishing pad of claim 1, wherein the Dq value is 7 μm to 14 μm, the Dsk value is greater than 0.4 to less than 1, and the Dku value is greater than 2 to less than 5.

### Claim 3 (depends on 1)

The polishing pad of claim 1, wherein n is 700 to 2,500, and d is −30 to 60.

### Claim 4 (depends on 1)

The polishing pad of claim 1, wherein, in the diameter distribution of the plurality of pores based on the polishing surface, the number average diameter of the plurality of pores is 15 μm to 25 μm, and the pore diameter at the maximum peak is 10 μm to 150 μm.

### Claim 5 (depends on 4)

The polishing pad of claim 4, wherein the pore diameter at the maximum peak is greater than the number average diameter of the plurality of pores by 5 μm to 30 μm.

### Claim 6 (depends on 1)

The polishing pad of claim 1, which has a polishing rate of 720 Å/min to 860 Å/min for a tungsten layer and a polishing rate of 2,750 Å/min to 3,300 Å/min for an oxide layer.