High power transformer and transmitter for geophysical measurements
AssigneeIris Instruments
InventorGhislain Pierrat
Life of this patent
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Abstract
An output high power transformer, including a primary and a secondary in galvanic isolation forming a flyback converter, wherein the primary includes at least one primary winding having at least two primary turns and a rectifier including a junction diode circuit; the secondary includes at least one secondary winding having at least one secondary turn; and the flyback converter includes at the primary at least one metal-oxide-semiconductor field-effect transistor (MOSFET), notably a Silicon Carbide MOSFET, and at the secondary at least one Silicon Carbide diode.
Claims13
An output high power transformer, comprising a primary and a secondary in galvanic isolation forming a flyback converter, said flyback converter comprising:
- at the primary at least one primary winding having at least two primary turns and a primary rectifier comprising a junction diode circuit and at least one metal-oxide-semiconductor field-effect transistor (MOSFET), notably a Silicon Carbide MOSFET;
- at the secondary at least one secondary winding having at least one secondary turn and at least one Silicon Carbide diode;
- wherein the primary winding and the secondary winding are magnetically coupled by being wound around the central limb in an interleave configuration;
- in said interleave configuration being such that a first half of the at least two primary turns of the primary windings are wound around the central limb and are concentrically overlapped with the secondary turns of the secondary winding, and the secondary turns of the secondary winding is concentrically overlapped with the second half of the at least two primary turns of the primary windings.
A power module comprising at least two electrically coupled transformers, each transformer comprising a primary and a secondary in galvanic isolation forming a flyback converter, wherein:
- at the primary comprises at least one primary winding having at least two primary turns and a primary rectifier comprising a junction diode circuit and at least one metal-oxide-semiconductor field-effect transistor (MOSFET), notably a Silicon Carbide MOSFET;
- the secondary comprises at least one secondary winding having at least one secondary turn and at least one Silicon Carbide diode;
- wherein the primary winding and the secondary winding are magnetically coupled by being wound around the central limb in an interleave configuration;
- in said interleave configuration being such that a first half of the at least two primary turns of the primary windings are wound around the central limb and are concentrically overlapped with the secondary turns of the secondary winding, and the secondary turns of the secondary winding is concentrically overlapped with the second half of the at least two primary turns of the primary windings.
Dependencies are inferred from the claim text.