Loading patent…
AssigneeHRL Laboratories, LLC
InventorsShanying Cui, Xin N. Guan, Adam F. Gross, Florian G. Herrault
Estimating the term…
Some variations provide a magnetically anisotropic structure comprising a hexaferrite film disposed on a substrate, wherein the hexaferrite film contains a plurality of discrete and aligned magnetic hexaferrite particles, wherein the hexaferrite film is characterized by an average film thickness from about 1 micron to about 500 microns, and wherein the hexaferrite film contains less than 2 wt % organic matter. The hexaferrite film does not require a binder. Discrete particles are not sintered or annealed together because the maximum processing temperature to fabricate the structure is 500° C. or less, such as 250° C. or less. The magnetic hexaferrite particles may contain barium hexaferrite (BaFe12O19) and/or strontium hexaferrite (SrFe12O19). The hexaferrite film may be characterized by a remanence-to-saturation magnetization ratio of at least 0.7. Methods of making and using the magnetically anisotropic structure are also described.
A magnetically anisotropic structure comprising a magnetically anisotropic film disposed directly or indirectly on a substrate, wherein said magnetically anisotropic film contains a plurality of discrete magnetic hexaferrite particles, wherein said magnetically anisotropic film is characterized by an average film thickness from about 1 micron to about 500 microns, wherein said magnetically anisotropic film contains less than 2 wt % organic matter, and wherein said magnetically anisotropic film does not contain a binder for said discrete magnetic hexaferrite particles.
A magnetically anisotropic structure comprising a magnetically anisotropic film disposed directly or indirectly on a substrate, wherein said magnetically anisotropic film contains a plurality of discrete magnetic hexaferrite particles, wherein said magnetically anisotropic film is characterized by an average film thickness from about 1 micron to about 500 microns, wherein said magnetically anisotropic film contains less than 2 wt % organic matter, and wherein said substrate is fabricated from a substrate material that contains a positive surface charge or a negative surface charge.
A magnetically anisotropic structure comprising a magnetically anisotropic film disposed directly or indirectly on a substrate, wherein said magnetically anisotropic film contains a plurality of discrete magnetic hexaferrite particles, wherein said magnetically anisotropic film is characterized by an average film thickness from about 1 micron to about 500 microns, wherein said magnetically anisotropic film contains less than 2 wt % organic matter, wherein said magnetically anisotropic film is immobilized onto said substrate with a coating applied to said magnetically anisotropic film and/or to said substrate, and wherein said coating contains a material selected from the group consisting of gold, palladium, silica, alumina, hafnia, and combinations thereof.
Dependencies are inferred from the claim text.