Exposure device, exposure method and photolithography method
AssigneesBoe Technology Group Co., Ltd., Chengdu Boe Optoelectronics Technology Co., Ltd.
InventorMoon Gyu Sung
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Abstract
An exposure device, an exposure method and a photolithography method are provided. The exposure device includes an exposure light source and an optical-path assembly, the optical-path assembly is configured to guide light emitted by the exposure light source to an exposing position, the optical-path assembly includes a light valve array, the light emitted by the exposure light source is able to be guided to the light valve array and then guided to the exposing position after the light is transmitted or reflected by the light valve array, the light valve array includes a plurality of light valve units, and optical transmittance or reflectivity of each of the light valve units is adjustable.
Claims18
An exposure method using an exposure device, wherein the exposure device comprises an exposure light source and an optical-path assembly,
- the optical-path assembly is configured to guide light emitted by the exposure light source to an exposing position,
- the optical-path assembly comprises a light valve array, the light emitted by the exposure light source is able to be guided to the light valve array and then guided to the exposing position after the light is transmitted or reflected by the light valve array,
- the light valve array comprises a plurality of light valve units, and optical transmittance or reflectivity of each of the light valve units is adjustable;
- and
- the exposure method comprises:
- acquiring an exposure compensating parameter;
- based on the exposure compensating parameter, adjusting reflectivity or transmittance of the light valve array;
- and
- performing exposure by the light that is emitted by the exposure light source and adjusted by the light valve array;
- wherein acquiring of the exposure compensating parameter comprises:
- obtaining a test pattern of critical dimension;
- getting a distribution matrix Aij of the critical dimension based on the test pattern;
- and
- calculating a compensating factor matrix Cij from a target critical dimension matrix atarget and the distribution matrix Aij of the critical dimension to function as the compensating parameter.
Dependencies are inferred from the claim text.