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AssigneeNortheastern University
InventorsAnthony Vargas, Fangze Liu, Christopher Adrian Lane, Daniel Rubin, Swastik Kar, Arun Bansil, Gianina Buda, Zachariah Hennighausen
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Heterocrystals of metal dichalcogenides and Bi2S3, Bi2Se3 or Bi2Te3 are presented, in which the metal dichalcogenides and Bi2S3, Bi2Se3 or Bi2Te3 do not largely retain their independent properties. These heterocrystals exhibit electronic and optical changes, which make them attractive for beyond-silicon electronics and optoelectronics. Particularly, these heterocrystals can be re-configured in a manner that allows bit writing and pattern drawing. Embodiments of these heterocrystals, methods of forming these heterocrystals, methods of reconfiguring the heterocrystals, information storage devices, optoelectronic circuits and photonic crystals are presented.
A heterocrystal consisting of a metal dichalcogenide having the formula ME2 in contact with Bi2S3, Bi2Se3 or Bi2Te3, wherein M is a Cr, Mo, or W and E is S, Se, or Te;
A heterocrystal consisting of MoS2 in contact with Bi2Se3 wherein MoS2 and Bi2Se3 have an interface area in which they contact, and the interface has been disrupted in selected positions to thereby reverse suppression of photoluminescence in these positions, wherein positions of the heterocrystal with suppressed photoluminescence and positions with photoluminescence are part of a photonic circuit or an optoelectronic circuit, wherein the heterocrystal exhibits a photonic pattern which has been formed by reconfiguring positions of the heterocrystal.
Dependencies are inferred from the claim text.