Apparatus with a substrate provided with plasma treatment

A computing device, comprising:

• a processor;
• and a memory coupled with the processor;
• wherein at least one of the processor or memory comprises an integrated circuit (IC), wherein the IC includes:
• a substrate with a surface that comprises a layer that contains a metal to provide signal routing for the IC, wherein the metal layer is provided in response to a plasma treatment of the surface with a gas containing a functional group, to provide absorption of a transition metal catalyst into the surface, and subsequent electroless plating of the surface with a metal, wherein the transition metal catalyst is to enhance electroless plating of the surface with the metal, wherein, prior to the electroless plating, the transition metal catalyst comprises a plurality of seed protrusions disposed on the surface, wherein the metal layer comprises metal growth including a plurality of metal bumps deposited on the surface on top of the plurality of seeds such that the metal growth covers the plurality of seeds.