Circuits for edge ring control in shaped DC pulsed plasma process device

A process chamber comprising:

• a chamber body;
• a lid disposed on the chamber body;
• an inductively coupled plasma apparatus positioned above the lid;
• and
• a substrate support assembly positioned within the chamber body, the substrate support assembly having a body, the body comprising:
• a substrate support portion having a substrate electrode embedded therein for applying a substrate voltage;
• an edge ring portion disposed adjacent to the substrate support portion, the edge ring portion having an edge ring electrode embedded therein for applying an edge ring voltage to an edge ring disposed on the edge ring portion;
• and
• a low-k dielectric cylindrical layer laterally separating the edge ring portion from the substrate support portion;
• an edge ring voltage control circuit coupled between the edge ring electrode disposed in the body and a first pulse DC power source;
• and
• a substrate voltage control circuit coupled between the substrate electrode and a second pulse DC power source, wherein the edge ring voltage control circuit and the
• substrate voltage control circuit each have a variable passive component and wherein the edge ring voltage control circuit is configured to transmit a pulse voltage from the first pulse DC power source through the variable passive component to the edge ring electrode, and wherein the edge ring voltage control circuit and substrate voltage control circuit are independently tunable to supply a difference in direct current voltage between the edge ring and the substrate, and wherein the variable passive component is a variable capacitor or a variable inductor.