Tin-containing precursors and methods of depositing tin-containing films
AssigneeApplied Materials, Inc.
InventorsThomas Knisley, Mark Saly, David Thompson
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Abstract
Tin containing precursors and methods of forming tin-containing thin films are described. The tin precursor has a tin-diazadiene bond and is homoleptic or heteroleptic. A suitable reactant is used to provide one of a metallic tin film or a film comprising one or more of an oxide, nitride, carbide, boride and/or silicide. Methods of forming ternary materials comprising tin with two or more of oxygen, nitrogen, carbon, boron, silicon, titanium, ruthenium and/or tungsten are also described.
Claims5
A method comprising exposing a substrate in a processing chamber to a deposition cycle comprising exposure to a tin precursor comprising a compound having a tin-diazadiene bond and a reactant to form a tin-containing film, the tin precursor comprises a compound having the formula
- where each R and R′ are independently selected from H, C1-6 alkyl, aryl, acyl, alkylamido, hydrazido, silyl, aldehyde, keto, C2-4 alkenyl and/or alkynyl groups and one nitrogen is covalently bound to the tin atom.
Dependencies are inferred from the claim text.