Method of fabricating semiconductor light-emitting device and semiconductor light-emitting device

A method of fabricating a semiconductor light-emitting device, the method comprising:

• (a) forming a semiconductor layer including a light-emitting layer on a first surface of a substrate;
• (b) forming a first trench and a second trench in the semiconductor layer, the first trench extending in a first direction that is parallel to a principal plane of the substrate, and the second trench being disposed inside and parallel to the first trench;
• cleaving the substrate along a second direction perpendicular to the first direction to form a bar-like substrate having a cleaved end face after performing (b), the second direction being parallel to the principal plane of the substrate;
• (c) forming a third trench parallel to the first trench in a second surface of the bar-like substrate opposite to a surface of the bar-like substrate corresponding to a portion of the first surface of the substrate after performing the cleaving;
• and
• (d) forming a semiconductor light-emitting device by dividing the bar-like substrate,
• wherein in (a), the semiconductor layer has a plurality of waveguides extending in the first direction,
• in (b), the first trench is formed between waveguides next to each other among the plurality of waveguides,
• in (d), an end of at least one divided side of the semiconductor light-emitting device is in the second trench,
• the first trench has a first width,
• the second trench has a second width, and
• the second width is less than the first width.

A semiconductor light-emitting device comprising:

• a chip-like substrate;
• and
• a semiconductor layer disposed on a first surface of the chip-like substrate and including a light-emitting layer,
• wherein a portion including a side of the semiconductor layer has a first step and a second step,
• the first step has a first side and a first bottom, the first side including a side of the light-emitting layer, and the first bottom being connected to an end portion of the first side near the chip-like substrate and extending in a direction that intersects the first side,
• the second step has a second side and a second bottom, the second side being connected to an end portion of the first bottom far from the first side and extending in a direction from the semiconductor layer toward the chip-like substrate, and the second bottom being connected to an end portion of the second side far from the first bottom and extending in a direction that intersects the second side,
• the second bottom is in the chip-like substrate, and
• a distance between the second bottom and a plane including the first surface in a normal direction is less than or equal to 5 μm.