Barrier film and an electronic device comprising the same

A barrier film comprising:

• a stacked sheet having a top surface and a bottom surface and comprising:
• at least two first layers formed of a semicovalent inorganic material;
• and
• at least one second layer formed of an ionic inorganic material,
• wherein:
• each second layer is disposed between two first layers with one first layer in contact with a first surface of the second layer and the other first layer in contact with an opposite second surface of the second layer,
• each first layer and second layer are alternately disposed,
• the first layers are disposed to form both the top and bottom surfaces of the stacked sheet,
• the semicovalent inorganic material comprises a metal oxide, a nitride of the corresponding metal or a mixture thereof, all of which have a binding energy of 530.5 eV to 533.5 eV,
• the ionic inorganic material comprises a metal oxide, a nitride of the corresponding metal or a mixture thereof, all of which have a binding energy of 529.6 eV to 530.4 eV,
• the difference in binding energy between the semicovalent inorganic material and the ionic inorganic material is in the range of 0.1 eV to 3.9 eV, and
• the ionic inorganic material is an oxide, a nitride or a nitride oxide including at least one metal selected from the group consisting of calcium, zinc, zirconium, indium and cerium.