Photodetector with superconductor nanowire transistor based on interlayer heat transfer

A method for operating a superconductor-based transistor, comprising:

• operating the superconductor-based transistor in a first mode, including:
• maintaining the superconductor-based transistor in an off state, including:
• maintaining a superconducting component of the superconductor-based transistor in a superconducting state;
• and
• maintaining a semiconducting component of the superconductor-based transistor in an off state;
• and
• transitioning the superconductor-based transistor from the off state to an on state, including supplying current to the superconducting component, wherein the current exceeds a superconducting current threshold for the superconducting component;
• wherein, in response to the current supplied to the superconducting component, the superconducting component transitions to a non-superconducting state and generates heat sufficient to increase a temperature of the semiconducting component above a semiconducting threshold temperature and enable current flow through the semiconducting component.

A transistor, comprising:

• a first wire including a semiconducting component configured to operate in an on state at temperatures above a semiconducting threshold temperature;
• and
• a second wire located adjacent to the semiconducting component;
• wherein, in response to an input current, the second wire is configured to generate heat sufficient to increase a temperature of the semiconducting component above the semiconducting threshold temperature;
• wherein the transistor is configured to operate in an off state while the semiconducting component is maintained at a temperature below the semiconducting threshold temperature, and
• wherein the transistor is configured to operate in an on state while the semiconducting component is at a temperature above the semiconducting threshold temperature.