Semiconductor device comprising halopalladate
AssigneeOxford University Innovation Limited
InventorsNobuya Sakai, Amir Abbas Haghighirad, Henry James Snaith
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Abstract
The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a halometallate compound comprising: (a) cesium; (b) palladium; and (c) one or more halide anions [X]. The invention also relates to a layer comprising the semiconducting material. The invention further relates to a process for producing a halometallate compound of formula (IV): [A]2[MIV][X]6, which process uses a H[X] and a compound comprising a sulfoxide group.
Claims12
A semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a halometallate compound comprising:
- (a) cesium;
- (b) palladium;
- and
- (c) one or more halide anions [X],
- and wherein the semiconductor device is an optoelectronic device.
Dependencies are inferred from the claim text.