Film formation apparatus and method of manufacturing semiconductor device

A method of manufacturing a semiconductor device using a film formation apparatus, wherein the film formation apparatus comprises:

• a stage configured to allow a substrate to be mounted thereon;
• a heater configured to heat the substrate;
• a mist supply source configured to supply mist of a solution comprising solvent and a material of a film dissolved in the solvent;
• a heated-gas supply source configured to supply heated gas that comprises gas constituted of a same material as a material of the solvent and has a higher temperature than the mist;
• and
• a delivery device configured to deliver the mist and the heated gas toward a surface of the substrate,
• the method comprising delivering the mist and the heated gas from the delivery device to the surface of the substrate so that the film is epitaxially grown on the surface of the substrate, wherein
• the delivery device comprises a first path and a second path provided separately from the first path, and
• during delivery of the mist and the heated gas from the delivery device to the surface of the substrate, the mist is delivered to the surface of the substrate through the first path, and the heated gas is delivered to the surface of the substrate through the second path.