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US 11,271,122 B2Granted
Short wavelength infrared optoelectronic devices having a dilute nitride layer
AssigneeArray Photonics, Inc.
InventorsRadek Roucka, Sabeur Siala, Aymeric Maros, Ting Liu, Ferran Suarez, Evan Pickett
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Abstract
Semiconductor optoelectronic devices having a dilute nitride active layer are disclosed. In particular, the semiconductor devices have a dilute nitride active layer with a bandgap within a range from 0.7 eV and 1 eV. Photodetectors comprising a dilute nitride active layer have a responsivity of greater than 0.6 A/W at a wavelength of 1.3 μm.
Claims24
A compound semiconductor optoelectronic device, comprising:
- a substrate;
- a first doped III-V layer overlying the substrate;
- an active region overlying the first doped III-V region, wherein,
- the active region comprises a pseudomorphic dilute nitride layer;
- the dilute nitride layer has a bandgap within a range from 0.7 eV and 1.0 eV;
- and
- the dilute nitride layer has a minority carrier lifetime of 1 ns or greater at a temperature of 25° C.;
- and
- a second doped III-V layer overlying the active region.
6 more elements
A method of forming a semiconductor optoelectronic device, comprising:
- forming a substrate;
- forming a first doped III-V layer overlying the substrate;
- forming an active region overlying the first doped III-V layer, wherein,
- the active region comprises a pseudomorphic dilute nitride layer;
- the dilute nitride layer has a bandgap within a range from 0.7 eV and 1.0 eV;
- and
- the dilute nitride layer has a minority carrier lifetime of 1 ns or greater;
- and
- forming a second doped III-V layer overlying the active region.
6 more elements
Dependencies are inferred from the claim text.