Semiconductor device
AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorsMasanori Kinugasa, Tooru Wakahoi
Life of this patent
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Abstract
According to one embodiment, a semiconductor device includes first, second, third, and fourth circuits. A first voltage is applied to the first circuit. A second voltage is applied to each of the second, third and fourth circuits. The third circuit is configured to generate a first control signal and a second control signal based on a signal generated by the first circuit and a signal generated by the second circuit. The fourth circuit is configured to output an output signal based on the first control signal and the second control signal. The output signal is brought to a high impedance state when at least one of the first voltage or the second voltage is not applied.
Claims18
A semiconductor device comprising:
- a first circuit to which a first voltage is applied and which is capable of receiving a first input signal and a second input signal and is capable of generating a first signal based on the first input signal, a second signal based on the second input signal, and a third signal obtained by inverting a logic level of the second signal;
- a second circuit to which a second voltage different from the first voltage is applied and which is capable of receiving the second input signal and is capable of generating a fourth signal based on the second input signal and a fifth signal obtained by inverting a logic level of the fourth signal;
- a third circuit to which the second voltage is applied and which is capable of generating a first control signal based on the first signal, the second signal, and the fourth signal, and a second control signal based on the first voltage, the first signal, the third signal, and the fifth signal;
- and
- a fourth circuit to which the second voltage is applied and which is capable of outputting an output signal based on the first control signal and the second control signal,
- wherein the output signal is brought to a high impedance state when at least one of the first voltage or the second voltage is not applied.
A semiconductor device comprising:
- a first circuit to which a first voltage is applied and which is capable of receiving a first input signal and a second input signal and is capable of generating a first signal based on the first input signal, a second signal based on the second input signal, and a third signal obtained by inverting a logic level of the second signal;
- a second circuit to which a second voltage different from the first voltage is applied and which is capable of receiving the second input signal and a third input signal and is capable of generating a fourth signal based on the second input signal, a fifth signal obtained by inverting a logic level of the fourth signal, and a sixth signal based on the third input signal;
- a third circuit to which the second voltage is applied and which is capable of generating a first control signal based on the first signal, the second signal, and the fourth signal, and a second control signal based on the first voltage, the first signal, the third signal, and the fifth signal;
- a fourth circuit to which the second voltage is applied and which is capable of outputting a first output signal based on the first control signal and the second control signal;
- a fifth circuit to which the first voltage is applied and which is capable of generating a third control signal based on the third signal, the fifth signal, and the sixth signal, and a fourth control signal based on the second voltage, the second signal, the fourth signal, and the sixth signal;
- and
- a sixth circuit to which the first voltage is applied and which is capable of outputting a second output signal based on the third control signal and the fourth control signal,
- wherein the first output signal and the second output signal are brought to a high impedance state when at least one of the first voltage or the second voltage is not applied.
Dependencies are inferred from the claim text.