Pressure sensor and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChi-Chao Hung
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Abstract
The present disclosure provides a pressure sensor, including a chamber and a film. The chamber includes a first wall with a first electrode and a second wall with a second electrode. The first wall faces the second wall, and the first electrode and the second electrode respectively include conductive or semiconductive material. The film lines a surface inside the chamber exclusive of the first electrode and the second electrode for blocking outgassing entering the chamber from the surface. A method of manufacturing the pressure sensor is also disclosed.
Claims20
A pressure sensor, comprising:
- a semiconductor device having a first electrode;
- a cavity formed over the semiconductor device, wherein the first electrode is exposed within the cavity;
- a pressure-sensing element formed over the cavity and opposite to the semiconductor device;
- and
- a first film covering an inner surface of the cavity exclusive of a surface of the first electrode and the pressure-sensing element, wherein the surface of the first electrode faces toward the pressure-sensing element and the first electrode is partially covered by the first film.
A pressure sensor, comprising:
- a semiconductor device, forming a first wall of a chamber and having a first electrode exposed within the chamber;
- a pressure-sensing element, forming a second wall of the chamber and being opposite to the semiconductor device;
- and
- a first film covering sidewalls of the first electrode and an inner surface of the chamber exclusive of the pressure-sensing element.
A pressure sensor, comprising:
- a semiconductor device having a first electrode;
- a pressure-sensing element;
- a dielectric layer disposed between the semiconductor device and the pressure-sensing element, wherein a cavity is formed in the dielectric layer and the first electrode is exposed within the cavity;
- a first film covering an inner surface of the cavity exclusive of the first electrode and the pressure-sensing element, wherein the inner surface includes a surface of the semiconductor device and two surfaces of the dielectric layer within the cavity.
Dependencies are inferred from the claim text.