Methods and systems for coating a steel substrate
AssigneePublic Joint Stock Company “Severstal”
InventorsZachary M. Detweiler, Joseph E. McDermott, Adam G. Thomas, Daniel E. Bullard, Martin Janousek
Life of this patent
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Abstract
The present disclosure provides systems and methods for depositing a metal layer adjacent to or on a substrate. Substrates may comprise, for example, one or more of iron, chromium, nickel, silicon, vanadium, titanium, boron, tungsten, aluminum, molybdenum, cobalt, manganese, zirconium, and niobium, oxides thereof, nitrides thereof, sulfides thereof, or any combination thereof. A substrate may be a steel substrate. A metal layer may be deposited via, for example, roll coating, vapor deposition, slurry deposition, or electrochemical deposition.
Claims24
A method for forming at least one metal layer adjacent to a substrate, the substrate provided as a coil, a coiled mesh, a wire, a pipe, a tube, a slab, a mesh, a dipped formed part, a foil, a plate, a wire rope, a rod, a threaded rod where a screw pattern has been applied to any length or thickness of rod, a sheet, or a planar surface, the method comprising:
- (a) providing said substrate having a grain size that is from about International Association for Testing and Materials (ASTM) 1 to ASTM 30, wherein said substrate includes at least two of (i) carbon at less than or equal to about 0.1 wt %, (ii) manganese at about 0.1 wt % to 3 wt %, (iii) silicon at less than or equal to about 1 wt %, (iv) vanadium at less than or equal to about 0.1 wt %, and (v) titanium at less than or equal to about 0.5 wt %, the balance of the substrate being iron;
- (b) depositing at least one metal-containing layer adjacent to said substrate;
- (c) annealing said substrate and said at least one metal-containing layer, thereby forming said at least one metal layer adjacent to said substrate, wherein said at least one metal layer has a grain size greater than about ASTM 6;
- and
- (d) after said annealing, drying said substrate and said at least one metal-containing layer in a vacuum, or near-vacuum atmosphere, or an atmosphere of an inert gas.
A method for forming at least one metal layer adjacent to a substrate, the substrate provided as a coil, a coiled mesh, a wire, a pipe, a tube, a slab, a mesh, a dipped formed part, a foil, a plate, a wire rope, a rod, a threaded rod where a screw pattern has been applied to any length or thickness of rod, a sheet, or a planar surface, the method comprising:
- (a) providing said substrate having a grain size that is from about International Association for Testing and Materials (ASTM) 1 to ASTM 30, wherein said substrate includes at least two of (i) carbon at less than or equal to about 0.1 wt %, (ii) manganese at about 0.1 wt % to 3 wt %, (iii) silicon at less than or equal to about 1 wt %, (iv) vanadium at less than or equal to about 0.1 wt %, and (v) titanium at less than or equal to about 0.5 wt %, the balance of the substrate being iron;
- (b) depositing at least one metal-containing layer adjacent to said substrate;
- and
- (c) annealing said substrate and said at least one metal-containing layer, thereby forming said at least one metal layer adjacent to said substrate, wherein said at least one metal layer has a grain size greater than about ASTM 6;
- wherein said at least one metal-containing layer comprises an alloying agent, a metal halide activator, and a solvent.
A method for forming at least one metal layer adjacent to a substrate, the substrate provided as a coil, a coiled mesh, a wire, a pipe, a tube, a slab, a mesh, a dipped formed part, a foil, a plate, a wire rope, a rod, a threaded rod where a screw pattern has been applied to any length or thickness of rod, a sheet, or a planar surface, the method comprising:
- (a) providing said substrate having a grain size that is from about International Association for Testing and Materials (ASTM) 1 to ASTM 30, wherein said substrate includes at least two of (i) carbon at less than or equal to about 0.1 wt %, (ii) manganese at about 0.1 wt % to 3 wt %, (iii) silicon at less than or equal to about 1 wt %, (iv) vanadium at less than or equal to about 0.1 wt %, and (v) titanium at less than or equal to about 0.5 wt %, the balance of the substrate being iron;
- (b) depositing at least one metal-containing layer adjacent to said substrate;
- and
- (c) annealing said substrate and said at least one metal-containing layer, thereby forming said at least one metal layer adjacent to said substrate, wherein said at least one metal layer has a grain size greater than about ASTM 6;
- wherein said depositing is by slurry deposition.
A method for forming at least one metal layer adjacent to a substrate, the substrate provided as a coil, a coiled mesh, a wire, a pipe, a tube, a slab, a mesh, a dipped formed part, a foil, a plate, a wire rope, a rod, a threaded rod where a screw pattern has been applied to any length or thickness of rod, a sheet, or a planar surface, the method comprising:
- (a) providing said substrate having a grain size that is from about International Association for Testing and Materials (ASTM) 1 to ASTM 30, wherein said substrate includes at least two of (i) carbon at less than or equal to about 0.1 wt %, (ii) manganese at about 0.1 wt % to 3 wt %, (iii) silicon at less than or equal to about 1 wt %, (iv) vanadium at less than or equal to about 0.1 wt %, and (v) titanium at less than or equal to about 0.5 wt %, the balance of the substrate being iron;
- (b) depositing at least one metal-containing layer adjacent to said substrate;
- and
- (c) annealing said substrate and said at least one metal-containing layer, thereby forming said at least one metal layer adjacent to said substrate, wherein said at least one metal layer has a grain size greater than about ASTM 6;
- comprising repeating (b) or (c).
Dependencies are inferred from the claim text.