Apparatus and process for electron beam mediated plasma etch and deposition processes

A method of processing a microelectronic workpiece, the method comprising:

• using a source plasma and a negative direct current (DC) bias to direct an electron beam onto an exposed surface of a substrate on a substrate holder to form dangling bonds on the exposed surface of the substrate, wherein the negative DC bias is applied at a location above the substrate;
• powering coils positioned around the processing chamber to sustain plasma within the processing chamber;
• radio frequency (RF) biasing the substrate;
• alternating the negative DC bias, the powering the coils, and the RF biasing of the substrate;
• and
• after directing the electron beam onto the exposed surface of the substrate, performing a plasma etch or a plasma deposition on the exposed surface.

A method of processing a substrate, comprising:

• alternatingly performing steps (i) and (ii) in a processing chamber including:
• (i) delivering an electron beam to a surface of the substrate on a workpiece holder in the processing chamber, wherein the delivering includes applying a negative direct current (DC) bias at a location above the substrate and forming dangling bonds in a material of the surface of the substrate;
• and
• (ii) after the delivering of the electron beam, performing a plasma deposition of a precursor gas on the surface of the substrate;
• wherein the method further comprises:
• applying a radio frequency (RF) biasing power to the substrate through the workpiece holder;
• powering coils positioned around the processing chamber to sustain plasma within the processing chamber;
• and
• alternating the negative DC bias, the powering the coils, and the RF biasing of the substrate.