Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method

A compound represented by the following formula (1):

• wherein R1 is a 2n-valent group of 1 to 60 carbon atoms or a single bond;
• R2 to R5 are each independently a linear, branched, or cyclic alkyl group of 1 to 10 carbon atoms, an aryl group of 6 to 10 carbon atoms, an alkenyl group of 2 to 10 carbon atoms, an alkoxy group of 1 to 30 carbon atoms, a halogen atom, a thiol group, a hydroxy group, or a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group, provided that at least one selected from R2 to R5 is a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group;
• m2 and m3 are each independently an integer of 0 to 8;
• m4 and m5 are each independently an integer of 0 to 9, provided that m2, m3, m4, and m5 are not 0 at the same time;
• n is an integer of 1 to 4;
• and p2 to p5 are each independently an integer of 0 to 2, wherein at least one selected from the group consisting of R1 to R5 is a group containing an iodine atom.

A compound represented by the following formula (1b):

• wherein R1 is a 2n-valent group of 1 to 60 carbon atoms or a single bond;
• R6 and R7 are each independently a linear, branched, or cyclic alkyl group of 1 to 10 carbon atoms, an aryl group of 6 to 10 carbon atoms, an alkenyl group of 2 to 10 carbon atoms, an alkoxy group of 1 to 30 carbon atoms, a halogen atom, or a thiol group;
• each R8 is independently a hydrogen atom or an acid dissociation group, provided that at least one R8 is an acid dissociation group;
• and m6 and m7 are each independently an integer of 0 to 7.