Solid-state imaging device and electronic device including light-shielding film for suppression of light leakage to memory
AssigneeSony Semiconductor Solutions Corporation
InventorJunji Sugizaki
Life of this patent
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Abstract
The present disclosure relates to a solid-state imaging device and an electronic device which efficiently capture incident light to improve sensitivity while maintaining the effect of suppressing noise generation. A memory is located on a side opposite from a light receiving surface and formed in the same substrate of Si as a photoelectric conversion element. The substrate including Si is defined by digging the Si deep from the light receiving surface, at a position where the memory is formed, and a bottom light-shielding film is formed at a bottom portion of the defined hole. The present disclosure is applicable to, for example, a stacked and back-illuminated solid-state imaging device.
Claims14
A solid-state imaging device, comprising:
- a memory that is located on a side opposite from a light receiving surface and formed in a same substrate of Si as a photoelectric conversion element;
- a bottom light-shielding film that is formed at a bottom portion of a hole defined by digging the Si deep from the light receiving surface, at a position where the memory is formed;
- a light-transmitting film that is formed to fill the hole over the bottom light-shielding film in the hole;
- a top light-shielding film that is formed on part of the light-transmitting film after the light-transmitting film is planarized;
- and
- a digging light-shielding film that is formed by digging the light-transmitting film to connect the top light-shielding film and the bottom light-shielding film.
An electronic device, comprising:
- a solid-state imaging device that includes:
- a memory that is located on a side opposite from a light receiving surface and formed in a same substrate of Si as a photoelectric conversion element;
- a bottom light-shielding film that is formed at a bottom portion of a hole defined by digging the Si deep from the light receiving surface, at a position where the memory is formed;
- a light-transmitting film that is formed to fill the hole over the bottom light-shielding film in the hole;
- a top light-shielding film that is formed on part of the light-transmitting film after the light-transmitting film is planarized;
- and
- a digging light-shielding film that is formed by digging the light-transmitting film to connect the top light-shielding film and the bottom light-shielding film;
- a signal processing circuit configured to process an output signal output from the solid-state imaging device;
- and
- an optical system configured to input incident light into the solid-state imaging device.
Dependencies are inferred from the claim text.