Solid-state imaging element, method for manufacturing solid-state imaging element, and electronic apparatus

A method for manufacturing a solid-state imaging element, the method comprising:

• stacking a plurality of photoelectric conversion elements for each pixel of a plurality of pixels of the solid-state imaging element, wherein
• the plurality of pixels includes a set of phase difference detection pixels for focus detection,
• each pixel of the plurality of pixels includes an upper electrode,
• the plurality of photoelectric conversion elements includes:
• a first photoelectric conversion element configured to:
• absorb a first light beam of a first wavelength;
• and
• generate electrical charges based on the absorption of the first light beam;
• and
• a second photoelectric conversion element configured to:
• absorb a second light beam of a second wavelength different from the first wavelength;
• and
• generate electrical charges based on the absorption of the second light beam;
• forming a first color filter on the upper electrode in a first phase difference detection pixel of the set of phase difference detection pixels, wherein
• the first color filter covers a right half of an upper face of one of the first photoelectric conversion element or the second photoelectric conversion element of the first phase difference detection pixel,
• the first color filter is different from each of the first photoelectric conversion element and the second photoelectric conversion element in the first phase difference detection pixel, and
• the first color filter is configured to absorb a third light beam of a third wavelength;
• and
• forming a second color filter on the upper electrode in a second phase difference detection pixel of the set of phase difference detection pixels, wherein
• the second color filter covers a left half of an upper face of one of the first photoelectric conversion element or the second photoelectric conversion element of the second phase difference detection pixel,
• the second color filter is different from each of the first photoelectric conversion element and the second photoelectric conversion element in the second phase difference detection pixel,
• the second color filter is configured to absorb a fourth light beam of a fourth wavelength different from the third wavelength,
• a position of the second color filter in the second phase difference detection pixel is different from a position of the first color filter in the first phase difference detection pixel, and
• the first color filter and the second color filter are absent on a left half of the upper face of the one of the first photoelectric conversion element or the second photoelectric conversion element of the first phase difference detection pixel.

An electronic apparatus, comprising:

• a solid-state imaging element including a plurality of pixels including a set of phase difference detection pixels for focus detection, wherein
• each pixel of the plurality of pixels includes:
• an upper electrode;
• a stacked structure including a plurality of photoelectric conversion elements, wherein the plurality of photoelectric conversion elements includes:
• a first photoelectric conversion element configured to:
• absorb a first light beam of a first wavelength;
• and
• generate electrical charges based on the absorption of the first light beam;
• and
• a second photoelectric conversion element configured to:
• absorb a second light beam of a second wavelength different from the first wavelength;
• and
• generate electrical charges based on the absorption of the second light beam, and
• the set of phase difference detection pixels includes:
• a first phase difference detection pixel that includes a first color filter on the upper electrode in the first phase difference detection pixel, wherein
• the first color filter is different from each of the first photoelectric conversion element and the second photoelectric conversion element in the first phase difference detection pixel,
• the first color filter is configured to absorb a third light beam of a third wavelength, and
• the first color filter covers a right half of an upper face of one of the first photoelectric conversion element or the second photoelectric conversion element of the first phase difference detection pixel;
• and
• a second phase difference detection pixel that includes a second color filter on the upper electrode in the second phase difference detection pixel, wherein
• the second color filter is different from each of the first photoelectric conversion element and the second photoelectric conversion element in the second phase difference detection pixel,
• the second color filter is configured to absorb a fourth light beam of a fourth wavelength different from the third wavelength,
• the second color filter covers a left half of an upper face of one of the first photoelectric conversion element or the second photoelectric conversion element of the second phase difference detection pixel,
• a position of the second color filter in the second phase difference detection pixel is different from a position of the first color filter in the first phase difference detection pixel, and
• the first color filter and the second color filter are absent on a left half of the upper face of the one of the first photoelectric conversion element or the second photoelectric conversion element of the first phase difference detection pixel.