Gate driver with VGTH and VCESAT measurement capability for the state of health monitor
AssigneeTexas Instruments Incorporated
InventorsXiong Li, Anant Kamath
Life of this patent
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Abstract
In a power supply system, a high-side (HS) insulated-gate bipolar transistor (IGBT) has a first collector, a first gate, and a first emitter. A low-side (LS) IGBT has a second collector coupled to the first emitter, a second gate, and a second emitter. A gate drive circuit is coupled to the first gate of the HS IGBT and the second gate of the LS IGBT. A control circuit is coupled to the gate drive circuit. The control circuit is configured to control the gate drive circuit for biasing the HS IGBT to a HS saturation, and determine a HS degradation of the HS IGBT based on a HS digitized gate voltage of the HS IGBT in the HS saturation.
Claims6
A power supply system comprising:
- a high-side (HS) insulated-gate bipolar transistor (IGBT) having a first collector, a first gate, and a first emitter;
- a low-side (LS) IGBT having a second collector coupled to the first emitter, a second gate, and a second emitter;
- a gate drive circuit coupled to the first gate of the HS IGBT and the second gate of the LS IGBT;
- and
- a control circuit coupled to the gate drive circuit, the control circuit configured to control the gate drive circuit for biasing the HS IGBT to an HS saturation, and determine an HS degradation of the HS IGBT based on an HS digitized gate voltage of the HS IGBT when the HS IGBT is in the HS saturation.
Dependencies are inferred from the claim text.