Acoustic wave device
AssigneeMurata Manufacturing Co., Ltd.
InventorChihiro Konoma
Life of this patent
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Abstract
An acoustic wave device includes a piezoelectric substrate and an IDT electrode directly or indirectly disposed on the piezoelectric substrate. The IDT electrode includes first metal layers, a second metal layer disposed on one of the first metal layers, and a third metal layer disposed on the second metal layer. The first, second, and third metal layers include side surfaces, respectively. The side surface includes a first end portion adjacent to the second metal layer. The side surface includes a second end portion adjacent to the second metal layer. In at least a portion of the IDT electrode, a creepage distance stretching from the first end portion to the second end portion via the side surface of the second metal layer is longer than a distance between the first end portion and the second end portion.
Claims19
An acoustic wave device comprising:
- a piezoelectric body;
- and
- an IDT electrode directly or indirectly disposed on the piezoelectric body;
- wherein
- the IDT electrode includes a first metal layer, a second metal layer disposed on the first metal layer, and a third metal layer disposed on the second metal layer;
- the first metal layer includes a side surface that connects a surface of the first metal layer adjacent to the piezoelectric body to a surface of the first metal layer adjacent to the second metal layer;
- the side surface of the first metal layer includes a first end portion adjacent to the second metal layer;
- the second metal layer includes a side surface that connects a surface of the second metal layer adjacent to the first metal layer to a surface of the second metal layer adjacent to the third metal layer;
- the third metal layer includes a side surface that connects a surface of the third metal layer adjacent to the second metal layer to a surface of the third metal layer opposite the second metal layer;
- the side surface of the third metal layer includes a second end portion adjacent to the second metal layer;
- the second end portion of the side surface of the third metal layer is directly connected to the side surface of the second metal layer;
- and
- in at least a portion of the IDT electrode, a creepage distance extending from the first end portion of the side surface of the first metal layer to the second end portion of the side surface of the third metal layer via the side surface of the second metal layer is longer than a distance between the first end portion of the side surface of the first metal layer and the second end portion of the side surface of the third metal layer.
An acoustic wave device comprising:
- a piezoelectric body;
- and
- an IDT electrode disposed on the piezoelectric body;
- wherein
- the IDT electrode includes a first metal layer disposed adjacent to the piezoelectric body, a second metal layer disposed on the first metal layer, and a third metal layer disposed on the second metal layer;
- the second metal layer includes a side surface that connects a surface of the second metal layer adjacent to the first metal layer to a surface of the second metal layer adjacent to the third metal layer;
- the third metal layer includes a side surface that connects a surface of the third metal layer adjacent to the second metal layer to a surface of the third metal layer opposite the second metal layer;
- the side surface of the third metal layer includes a second end portion adjacent to the second metal layer;
- the second end portion of the side surface of the third metal layer is directly connected to the side surface of the second metal layer;
- the second metal layer includes an overhanging portion projecting outward from an outer edge of the first metal layer;
- and
- the overhanging portion extends in a direction away from the piezoelectric body, or extends parallel or substantially parallel to a direction in which a principal surface of the piezoelectric body extends.
Dependencies are inferred from the claim text.