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US 11,239,638 B2Granted
Emitter oxidation uniformity within a wafer
AssigneeLumentum Operations LLC
InventorsBenjamin Kesler, Ajit Vijay Barve, Guowei Zhao
Life of this patent
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Abstract
A wafer may comprise a substrate layer and a plurality of vertical cavity surface emitting lasers (VCSELs) formed on or within the substrate layer. A respective trench-to-trench distance associated with the plurality of VCSELs may vary across the wafer based on a predicted variation of an oxidation rate of an oxidation layer across the wafer.
Claims26
A wafer, comprising:
- a substrate layer,
- a plurality of vertical cavity surface emitting lasers (VCSELs) formed on or within the substrate layer,
- wherein the plurality of VCSELs includes a first VCSEL and second VCSEL,
- wherein a first trench-to-trench distance, across the first VCSEL and between a first set of trenches of the first VCSEL, varies from a second trench-to-trench distance, across the second VCSEL and between a second set of trenches of the second VCSEL, proportional to a predicted rate of change of an oxidation rate of an oxidation layer across the wafer from a center of the wafer to an edge of the wafer, and
- wherein the predicted rate of change of the oxidation rate is based on one or more historical measurements associated with at least one of a furnace associated with the wafer or a wafer type of the wafer.
2 more elements
A wafer, comprising:
- a substrate layer,
- a plurality of vertical cavity surface emitting lasers (VCSELs) formed on or within the substrate layer,
- wherein a respective trench-to-trench distance, between a respective plurality of trenches for respective VCSELs of the plurality of VCSELs, varies across the wafer proportional to a predicted rate of change of an oxidation rate of an oxidation layer across the wafer from a center of the wafer to an edge of the wafer, and
- wherein the predicted rate of change of the oxidation rate is based on one or more historical measurements associated with at least one of a furnace associated with the wafer or a wafer type of the wafer.
1 more element
A wafer, comprising:
- a substrate layer,
- a plurality of emitters formed on or within the substrate layer,
- wherein the plurality of emitters includes a first emitter and second emitter, and
- wherein a first trench-to-trench distance, across the first emitter and between a first set of trenches of the first emitter, varies from a second trench-to-trench distance, across the second emitter and between a second set of trenches of the second emitter, proportional to a predicted rate of change of an oxidation rate of an oxidation layer across the wafer from a center of the wafer to an edge of the wafer, and
- wherein the predicted rate of change of the oxidation rate is based on one or more historical measurements associated with at least one of a furnace associated with the wafer or a wafer type of the wafer.
2 more elements
Dependencies are inferred from the claim text.