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US 11,239,631 B2Granted
Self-alignment features for III-V ridge process and angled facet die
AssigneeInternational Business Machines Corporation
InventorsTymon Barwicz, Yves C. Martin, Jason S. Orcutt
Life of this patent
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Abstract
A method of forming a laser including device is provided that in one embodiment includes providing a laser chip including at least one ridge structure that provides an alignment features. The method further includes bonding a type IV photonics chip to the laser chip, wherein a vertical alignment feature from the type IV photonics chip is inserted in a recess relative to the at least one ridge structure that provides the alignment features of the laser structure.
Claims20
A method of forming a laser including device comprising:
- providing a laser chip including a first ridge structure as a component of a ridge laser that is atop a multi quantum well layer, and at least one second ridge structure that provides a cavity that provides alignment features, the first ridge structure and the at least one second ridge structures composed of a same material composition, wherein the multi quantum well layer extends laterally from the ridge laser to the alignment features, the first ridge structure and the at least one second ridge structures being a plateau of semiconductor material over the multi quantum well layer of the laser, and a dielectric layer is located on the second ridge structure;
- and
- bonding a photonics chip to the laser chip, wherein the photonics chip is vertically aligned and laterally aligned to the laser chip, when an alignment feature from the photonics chip is inserted into a recess of the cavity relative to the at least one second ridge structure that provides the alignment features of the laser chip, the alignment feature from the photonics chip contacting the multi quantum well layer, wherein the photonics chip is bonded to the laser chip by solder connection to bonding pads of the laser chip and the photonics chip that are separate from the alignment features.
A method of forming a laser including device comprising:
- providing a laser chip including a first ridge structure as a component of a ridge laser that is atop a multi quantum well layer, and at least one second ridge structure that provides an angled cavity that provides alignment features, the first ridge structure and the at least one second ridge structures composed of a same material composition and being a plateau of semiconductor material over the multi quantum well layer of the laser, and a dielectric layer is located on the second ridge structure, wherein the multi quantum well layer extends laterally from the ridge laser to the alignment features by a dimension ranging from 100 nm to 200 nm;
- and
- bonding a photonics chip to the laser chip, wherein an alignment feature from the photonics chip is vertically aligned and laterally aligned when inserted into the angled cavity that provides the alignment features of the laser chip, the alignment feature from the photonics chip contacting the multi quantum well layer, wherein the photonics chip is bonded to the laser chip by a solder connection to bonding pads that are separate from the alignment features of the laser chip.
A laser device comprising:
- a laser chip including a ridge laser including a first ridge structure overlying a multi-quantum well having an electrical contact to the first ridge structure and at least one second ridge structure as an alignment feature to provide an alignment cavity, the first ridge structure and the at least one second ridge structure composed of a same material composition and being a plateau of semiconductor material over the multi quantum well layer of the laser, and a dielectric layer is located on the second ridge structure, the multi quantum well provided by a multi quantum well layer that extends laterally from the ridge laser to the alignment cavity;
- and
- a photonics chip including an alignment feature that is positioned within the alignment cavity to align the photonics chip to the laser chip vertically and laterally, the laser chip bound to the photonics chip by solder connection to bonding pads that are separate from the alignment features of the laser chip and the alignment feature of the photonics chip, the alignment feature of the photonics chip contacting a portion of the multi-quantum well layer within the alignment cavity.
Dependencies are inferred from the claim text.