Light emitting diode, manufacturing method thereof and display device including the same

A display device comprising a plurality of light emitting diodes, wherein each light emitting diode of the plurality of light emitting diodes comprises:

• a first electrode;
• a second electrode opposite the first electrode;
• an emission layer between the first electrode and the second electrode, the emission layer comprising a quantum dot;
• a first charge transfer layer between the first electrode and the emission layer;
• a second charge transfer layer between the second electrode and the emission layer;
• and
• an insulating layer between the first charge transfer layer and the emission layer, and/or between the second charge transfer layer and the emission layer,
• wherein the insulating layer comprises an inorganic material, and
• wherein the second charge transfer layer comprises:
• an electron injection layer adjacent to the second electrode;
• and
• an electron transport layer between the electron injection layer and the emission layer.

A method for manufacturing a light emitting diode, the method comprising:

• forming an emission layer comprising a quantum dot on a first electrode;
• forming an insulating layer by depositing an inorganic material on the emission layer;
• forming a second electrode on the insulating layer;
• forming a first charge transfer layer between the first electrode and the emission layer;
• and
• forming a second charge transfer layer between the second electrode and the emission layer,
• wherein the insulating layer is between the first charge transfer layer and the emission layer, and/or between the second charge transfer layer and the emission layer, and
• wherein the second charge transfer layer comprises:
• an electron injection layer adjacent to the second electrode;
• and
• an electron transport layer between the electron injection layer and the emission layer.