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US 11,239,418 B2Granted
Memory device having a ring heater
AssigneeInternational Business Machines Corporation
InventorKangguo Cheng
Life of this patent
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Abstract
A semiconductor device includes a base structure of a memory device including a first electrode, first dielectric material having a non-uniform etch rate disposed on the base structure, a via within the first dielectric material, and a ring heater within the via on the first electrode. The ring heater has a geometry based on a shape of the via that produces a resistance gradient.
Claims9
A semiconductor device, comprising:
- a base structure of a memory device including a first electrode;
- first dielectric material having a non-uniform etch rate disposed on the base structure;
- a via within the first dielectric material;
- and
- a ring heater disposed within the via on the first electrode, the ring heater having a geometry based on a shape of the via that produces a resistance gradient, the via being a cone-shaped via formed within an opening within the first dielectric layer to the first electrode.
2 more elements
A semiconductor device, comprising:
- a base structure of a memory device including a first electrode;
- first dielectric material having a non-uniform etch rate disposed on the base structure;
- a via within the first dielectric material;
- and
- a ring heater disposed within the via on the first electrode, the ring heater having a geometry based on a shape of the via that produces a resistance gradient,
- wherein the first dielectric material and the ring heater are selected from the group consisting of:
- first dielectric material having an etch rate gradient and a ring heater having a cone shape, and first dielectric material including a plurality of dielectric layers having different etch properties and a ring heater having a staircase shape.
4 more elements
Dependencies are inferred from the claim text.