Resistive random access memory and method of manufacturing the same

Abstract

Provided is a resistive random access memory (RRAM) including a dielectric layer, a lower electrode, a data storage layer, an isolation structure, a first oxygen reservoir layer, a second oxygen reservoir layer, and an upper electrode. The lower electrode protrudes from a top surface of the dielectric layer. The data storage layer conformally covers the lower electrode and the dielectric layer. The isolation structure is disposed on the lower electrode. The first oxygen reservoir layer is disposed on the data storage layer at a first side of the isolation structure. The second oxygen reservoir layer is disposed on the data storage layer at a second side of the isolation structure. The isolation structure separates the first oxygen reservoir layer from the second oxygen reservoir layer. The upper electrode is disposed on and shared by the first and second oxygen reservoir layers. A method of manufacturing the RRAM is also provided.

Dependencies are inferred from the claim text.