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US 11,239,416 B2Granted
Variable resistance memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsJungho Yoon, Soichiro Mizusaki, Youngjin Cho
Life of this patent
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Abstract
A variable resistance memory device includes a first conductive line extending in a first direction, a second conductive line extending in a second direction, the second direction intersecting the first direction on the first conductive line, a fixed resistance layer between the first conductive line and the second conductive line, and a variable resistance layer between the first conductive line and the second conductive line, wherein the fixed resistance layer and the variable resistance layer are electrically connected in parallel to each other between the first conductive line and the second conductive line.
Claims23
A variable resistance memory device comprising:
- a first conductive line extending in a first direction;
- a second conductive line extending in a second direction, the second direction intersecting the first direction on the first conductive line;
- a fixed resistance layer between the first conductive line and the second conductive line;
- and
- a variable resistance layer between the first conductive line and the second conductive line,
- wherein the fixed resistance layer and the variable resistance layer are electrically connected in parallel to each other between the first conductive line and the second conductive line, and
- wherein
- the fixed resistance layer is in a region where the first conductive line and the second conductive line intersect each other,
- the variable resistance layer is on a side surface of the fixed resistance layer, and
- the fixed resistance layer extends in the second direction along the second conductive line.
7 more elements
A variable resistance memory device comprising:
- first conductive lines extending in a first direction and arranged in a second direction that intersects with the first direction;
- second conductive lines extending in the second direction on the first conductive lines and arranged in the first direction;
- fixed resistance layers provided between the first conductive lines and the second conductive lines;
- and
- variable resistance layers electrically connected in parallel to the fixed resistance layers,
- wherein each of the fixed resistance layers is electrically connected to one of the first conductive lines immediately adjacent thereto and one of the second conductive lines immediately adjacent thereto,
- wherein each of the variable resistance layers is electrically connected to one of the first conductive lines immediately adjacent thereto and one of the second conductive lines immediately adjacent thereto, and
- wherein
- each of the fixed resistance layers is in a region where a respective one of the first conductive lines and a respective one of the second conductive lines intersect each other,
- each of the variable resistance layers is on a side surface of a respective one of the fixed resistance layers, and
- each of the fixed resistance layers extends in the second direction along a respective one of the second conductive lines.
8 more elements
A variable resistance memory device comprising:
- first conductive line layers and second conductive line layers that are alternately stacked;
- fixed resistance layers between the first conductive line layers and the second conductive line layers;
- and
- variable resistance layers between the first conductive line layers,
- wherein each of the variable resistance layers extends along side surfaces of a pair of fixed resistance layers spaced apart from each other with one of the second conductive line layers therebetween among the fixed resistance layers,
- wherein each of the first conductive line layers includes first conductive lines extending in a first direction and arranged in a second direction that intersects with the first direction, and
- wherein each of the second conductive line layers includes second conductive lines extending in the second direction and arranged in the first direction.
4 more elements
A variable resistance memory device comprising:
- a first conductive line extending in a first direction;
- a second conductive line extending in a second direction, the second direction intersecting the first direction on the first conductive line;
- a parallel resistance layer electrically connecting the first and second conductive lines, the parallel resistance layer including a fixed resistance layer and a variable resistance layer electrically connected in parallel, the variable resistance layer being one of a phase change material or a layer configured to have mobile oxygen vacancies, and
- wherein
- the fixed resistance layer is in a region where the first conductive line and the second conductive line intersect each other,
- the variable resistance layer is on a side surface of the fixed resistance layer, and
- the fixed resistance layer extends in the second direction along the second conductive line.
4 more elements
A variable resistance memory device comprising:
- a first conductive line extending in a first direction;
- a second conductive line extending in a second direction, the second direction intersecting the first direction on the first conductive line;
- a variable resistance layer provided in a region where the first conductive line and the second conductive line intersect each other;
- and
- a fixed resistance layer provided on a side of the variable resistance layer,
- wherein the fixed resistance layer and the variable resistance layer are electrically connected in parallel to each other between the first conductive line and the second conductive line, and
- wherein the variable resistance layer extends in the second direction along the second conductive line.
4 more elements
Dependencies are inferred from the claim text.