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US 11,239,415 B2Granted
Memory device and fabrication method thereof
AssigneeNanya Technology Corporation
InventorWei-Chuan Fang
Life of this patent
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Abstract
A method of forming a memory device includes the following steps. A plurality of carbon nanotubes are formed over a substrate as a first electrode. An insulating layer is formed over the carbon nanotubes. A graphene is formed over the insulating layer as a second electrode separated from the first electrode by the insulating layer.
Claims8
A method, comprising:
- forming a conductive layer over a substrate;
- forming a plurality of carbon nanotubes over the substrate as a first electrode after forming the conductive layer;
- forming an insulating layer over the carbon nanotubes, wherein the insulating layer has a first portion and a second portion in direct contact with the first portion, and wherein the carbon nanotubes extend from the conductive layer to the insulating layer;
- and
- forming a graphene layer over the insulating layer as a second electrode separated from the first electrode by the insulating layer, such that the first portion of the insulating layer is in direct contact with the graphene layer and the second portion of the insulating layer is in direct contact with the carbon nanotubes, and such that the graphene layer fully covers the carbon nanotubes.
2 more elements
Dependencies are inferred from the claim text.