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US 11,239,413 B2Granted
Magnetic device and magnetic random access memory
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShy-Jay Lin, Mingyuan Song
Life of this patent
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Abstract
A spin-orbit-torque (SOT) magnetic device includes a bottom metal layer, a first magnetic layer, as a magnetic free layer, disposed over the bottom metal layer, a spacer layer disposed over the first magnetic layer, and a second magnetic layer disposed over the spacer layer. The first magnetic layer includes a lower magnetic layer, a middle layer made of non-magnetic layer and an upper magnetic layer.
Claims20
A spin-orbit-torque (SOT) magnetic device, comprising:
- a bottom metal layer including a upper layer and a lower layer made of IrMn;
- a first magnetic layer, as a magnetic free layer, disposed over the bottom metal layer;
- a spacer layer disposed over the first magnetic layer;
- a second magnetic layer disposed over the spacer layer;
- and
- an intermediate metal layer disposed between the spacer layer and the second magnetic layer,
- wherein the first magnetic layer includes a lower magnetic layer, a middle layer made of non-magnetic layer, a first interfacial layer disposed between the lower magnetic layer and the middle layer, an upper magnetic layer and a second interfacial layer disposed between the middle layer and the upper magnetic layer,
- at least one of the first and second interfacial layers is made of FeB,
- the intermediate metal layer is a magnesium layer containing Mg more than 99%, and
- a direction of magnetic field of the lower magnetic layer is perpendicular to a film stack direction and a direction of magnetic field of the upper magnetic layer is parallel to the film stack direction.
7 more elements
A spin-orbit-torque (SOT) magnetic device, comprising:
- a bottom metal layer;
- a first magnetic layer, as a free magnetic layer, disposed over the bottom metal layer;
- a spacer layer disposed over the first magnetic layer;
- and
- a second magnetic layer disposed over the spacer layer,
- wherein the first magnetic layer includes a lower magnetic layer, a middle layer made of non-magnetic layer, an upper magnetic layer, a first interfacial layer between the lower magnetic layer and the middle layer and a second interfacial layer between the middle layer and the upper magnetic layer, and
- at least one of the first and second interfacial layers is made of FeB.
4 more elements
A spin-orbit-torque (SOT) magnetic device, comprising:
- a bottom metal layer including an antiferromagnetic layer;
- a first magnetic layer, as a free magnetic layer, disposed under the bottom metal layer;
- a spacer layer disposed under the first magnetic layer;
- and
- a second magnetic layer disposed under the spacer layer,
- wherein the first magnetic layer includes a lower magnetic layer, a middle layer made of non-magnetic layer, a first interfacial layer disposed between the lower magnetic layer and the middle layer, an upper magnetic layer and a second interfacial layer disposed between the middle layer and the upper magnetic layer,
- at least one of the first and second interfacial layers is made of FeB,
- a direction of magnetic field of the lower magnetic layer is tilted by 70-89 degrees with respect to a film stack direction, and
- the lower magnetic layer is made of a different material than the upper magnetic layer.
6 more elements
Dependencies are inferred from the claim text.