Spin-orbit-torque magnetization rotational element, spin-orbit-torque magnetoresistance effect element, magnetic memory, and oscillator

A spin-orbit-torque magnetization rotational element comprising:

• a spin-orbit-torque wiring extending in a first direction, wherein the spin-orbit-torque wiring produces a spin current due to a spin Hall effect when a current flows;
• an antiferromagnetic layer laminated on one surface of the spin-orbit-torque wiring;
• and
• a first ferromagnetic layer located on a side of the antiferromagnetic layer opposite to the spin-orbit-torque wiring and magnetically coupled with the antiferromagnetic layer by exchange coupling,
• wherein a length of the antiferromagnetic layer in the first direction is shorter than a length of the spin-orbit-torque wiring in the first direction.