Architecture for hybrid TFT-based micro display projector

A method comprising:

• obtaining a semiconductor structure, wherein the semiconductor structure is a layered epitaxial structure including a first doped semiconductor layer, a second doped semiconductor layer, and a light-emitting layer between the first doped semiconductor layer and the second doped semiconductor layer;
• depositing, rather than bonding using bonding pads, a thin-film circuit layer on the semiconductor structure;
• forming circuitry in the thin-film circuit layer for controlling light emission from the light-emitting layer;
• obtaining a backplane, the backplane comprising drive circuitry for supplying electrical current to the thin-film circuit layer through a plurality of metal bonds between the backplane and the thin-film circuit layer;
• forming a plurality of interconnects on the thin-film circuit layer or on the backplane;
• bonding the backplane to the thin-film circuit layer using the plurality of interconnects, wherein the plurality of interconnects become the plurality of metal bonds after bonding;
• and
• forming an array of light emitting diodes (LEDs) from the semiconductor structure, wherein the number of metal bonds in the plurality of metal bonds is less than the number of LEDs in the array of LEDs, the array of LEDs have a light-emitting side and a side opposite the light-emitting side, and wherein the thin-film circuit layer is deposited on the side opposite the light-emitting side.

A system for a near-eye display, the system comprising:

• a frame;
• a waveguide display coupled with the frame;
• and
• a projector comprising a light source, the projector configured to direct light to the waveguide display, wherein the light source comprises:
• an array of light emitting diodes (LEDs) comprising a layered epitaxial structure including a first doped semiconductor layer, a second doped semiconductor layer, and a light-emitting layer between the first doped semiconductor layer and the second doped semiconductor layer;
• a thin-film circuit layer deposited, rather than bonded using bonding pads, on the array of LEDs, wherein the array of LEDs is a support structure for the thin-film circuit layer, and the thin-film circuit layer comprises circuitry for controlling operation of LEDs in the array of LEDs;
• and
• a backplane coupled with the thin-film circuit layer using a plurality of metal bonds between the backplane and the thin-film circuit layer, the backplane comprising drive circuitry for supplying electrical current to the thin-film circuit layer through the plurality of metal bonds, wherein the number of metal bonds in the plurality of metal bonds is less than the number of LEDs in the array of LEDs.