Optoelectronic semiconductor chip, high-voltage semiconductor chip and method for producing an optoelectronic semiconductor chip
AssigneeOSRAM OLED GmbH
InventorsFabian Kopp, Attila Molnar
Life of this patent
Estimating the term…
Abstract
An optoelectronic semiconductor chip may include a semiconductor layer sequence having at least one n-doped semiconductor layer, at least one p-doped semiconductor layer, and an active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer. A p-terminal contact may be electrically contacted to the p-doped semiconductor layer. An n-terminal contact may be electrically contacted to the n-doped semiconductor layer. The n-terminal contact may be arranged in direct contact with the p-doped semiconductor layer at least in regions.
Claims17
An optoelectronic semiconductor chip, comprising
- a semiconductor layer sequence comprising at least one n-doped semiconductor layer, at least one p-doped semiconductor layer, and an active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer;
- a p-terminal contact electrically contacting the p-doped semiconductor layer;
- an n-terminal contact electrically contacting the n-doped semiconductor layer;
- wherein the n-terminal contact is arranged in direct contact with the p-doped semiconductor layer at least in regions;
- and
- a first dielectric mirror element is arranged in regions between the p-doped semiconductor layer and the n-terminal contact.
Dependencies are inferred from the claim text.