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US 11,239,391 B2Granted
Nanostructure
AssigneeNorwegian University of Science and Technology (Ntnu)
InventorsBjørn Ove Myking Fimland, Helge Weman, Dingding Ren
Life of this patent
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Abstract
A composition of matter comprising at least one nanostructure grown epitaxially on an optionally doped β-Ga2O3 substrate, wherein said nanostructure comprises at least one group III-V compound.
Claims17
A composition of matter comprising at least one nanostructure grown epitaxially on a doped or undoped β-Ga2O3 substrate,
- wherein said nanostructure comprises at least one group III-V compound;
- wherein said nanostructure grows from a (−201) or (100) β-Ga2O3 substrate plane;
- and
- wherein said nanostructure is grown in the absence of a catalyst.
1 more element
Dependencies are inferred from the claim text.