Semiconductor device
AssigneeEpistar Corporation
InventorsMeng-Yang Chen, Jung-Jen Li
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Abstract
A semiconductor device includes a first type semiconductor structure, an active structure, and a contact layer. The first type semiconductor structure includes a first lattice constant, a first side and a second side opposite to the first side. The active structure is on the first side of the first type semiconductor structure and emits a radiation, and the radiation has a peak wavelength between 1000 nm and 2000 nm. The contact layer is on the second side of the first type semiconductor structure and includes a second lattice constant. A difference between the first lattice constant and the second lattice constant is at least 0.5%.
Claims20
A semiconductor device comprising:
- a first type semiconductor structure comprising a first lattice constant, a first side and a second side opposite to the first side;
- an active structure on the first side and emitting a radiation having a peak wavelength between 1000 nm and 2000 nm;
- and
- a contact layer on the second side and comprising a second lattice constant,
- wherein a difference between the second lattice constant and the first lattice constant is at least 0.5%, and
- wherein the contact layer comprises a III-V group semiconductor material.
Dependencies are inferred from the claim text.