Optoelectronic semiconductor component
AssigneeOSRAM Opto Semiconductors GmbH
InventorsKarl Weidner, Ralph Wirth, Axel Kaltenbacher, Walter Wegleiter, Bernd Barchmann, Oliver Wutz, Jan Marfeld
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Abstract
An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, side areas connecting the top area and the bottom area, and epitaxially produced layers; electrical n- and p-side contacts at the bottom area of the optoelectronic semiconductor chip; and an electrically insulating shaped body, wherein the shaped body surrounds the optoelectronic semiconductor chip at its side areas, and the epitaxially produced layers are free from the shaped body.
Claims10
An optoelectronic semiconductor component comprising:
- an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, side areas connecting said top area and said bottom area, and epitaxial layers;
- electrical n-side and p-side contacts at the bottom area of the optoelectronic semiconductor chip;
- and
- an electrically insulating shaped body, wherein
- the electrically insulating shaped body surrounds the optoelectronic semiconductor chip at its side areas, and
- the epitaxial layers are free from the shaped body such that the epitaxial layers are not covered or are completely exposed.
An optoelectronic semiconductor component comprising:
- at least two optoelectronic semiconductors chips each having side areas and epitaxial layers;
- and
- an electrically insulating shaped body, wherein
- the electrically insulating shaped body surrounds all side areas of the at least two optoelectronic semiconductor chips, and
- the at least two optoelectronic semiconductor chips are connected to one another by the shaped body such that the epitaxial layers are not covered or are completely exposed.
An optoelectronic semiconductor component comprising:
- an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, side areas connecting said top area and said bottom area, and epitaxial layers;
- electrical n-side and p-side contacts at the bottom area of the optoelectronic semiconductor chip;
- an electrically insulating shaped body, and
- a phosphor layer comprising phosphor particles, wherein the phosphor layer contacts the electrically insulating shaped body and the optoelectronic semiconductor chip and the phosphor particles absorb electromagnetic radiation generated by the semiconductor chip during operation and re-emit electromagnetic radiation in a different wavelength range than the optoelectronic semiconductor chip, wherein
- the electrically insulating shaped body surrounds the optoelectronic semiconductor chip at its side areas, and
- the epitaxial layers are free from the shaped body such that the epitaxial layers are not covered or are completely exposed.
Dependencies are inferred from the claim text.