Light emitting device

A light emitting device, comprising:

• a first semiconductor layer;
• a second semiconductor layer provided on a bottom surface of the first semiconductor layer;
• an active layer interposed between the first semiconductor layer and the second semiconductor layer;
• a dielectric layer provided on a bottom surface of the second semiconductor layer;
• a first n-contact provided on a first etched surface of the first semiconductor layer;
• and
• a first p-contact and a plurality of second p-contacts provided on the bottom surface of the second semiconductor layer,
• wherein, when viewed in plan, the first n-contact is disposed in a central region of the first semiconductor layer,
• wherein the first p-contact is closer to the first n-contact than one second p-contact of the plurality of second p-contacts, and
• wherein, when viewed in plan, an area of the first p-contact is greater than an area of each of the plurality of second p-contacts.

A light emitting device, comprising:

• a first semiconductor layer;
• a second semiconductor layer provided on a bottom surface of the first semiconductor layer;
• an active layer interposed between the first semiconductor layer and the second semiconductor layer;
• a transparent conductive layer provided on a bottom surface of the second semiconductor layer;
• a first electrode provided on a first etched surface of the first semiconductor layer;
• a second electrode provided on a bottom surface of the transparent conductive layer;
• a plurality of first n-contacts interposed between the first semiconductor layer and the first electrode;
• and
• a plurality of first p-contacts and a plurality of second p-contacts interposed between the transparent conductive layer and the second electrode,
• wherein one first n-contact of the plurality of first n-contacts corresponds to a region where the first semiconductor layer is connected to the first electrode,
• wherein one first p-contact of the plurality of first p-contacts corresponds to a region where the second semiconductor layer is connected through the transparent conductive layer to the second electrode,
• wherein, when viewed in plan, the one first n-contact is disposed along an edge region of the first semiconductor layer,
• wherein the one first p-contact is interposed between one second p-contact, of the plurality of second p-contacts, and the one first n-contact, and
• wherein, when viewed in plan, the one first p-contact curves around the one first n-contact.