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US 11,239,384 B2Granted
Semiconductor wafers and semiconductor devices with barrier layer and methods of manufacturing
AssigneeInfineon Technologiesag
InventorsFrancisco Javier Santos Rodriguez, Roland Rupp, Hans-Joachim Schulze
Life of this patent
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Abstract
A semiconductor ingot is sliced to obtain a semiconductor slice with a front side surface and a rear side surface parallel to the front side surface. A passivation layer is formed directly on at least one of the front side surface and the rear side surface. A barrier layer including least one of silicon carbide, a ternary nitride, and a ternary carbide is formed on the rear side surface.
Claims18
A semiconductor wafer comprising:
- a semiconductor slice with a front side surface and a rear side surface parallel to the front side surface;
- a barrier layer from at least one of silicon carbide, a ternary nitride and a ternary carbide disposed on the rear side surface;
- and
- a passivation layer directly disposed on at least one of the front side surface and the rear side surface,
- wherein the semiconductor slice comprises a single support ring concentric to a horizontal center of the semiconductor wafer, and wherein a supplementary layer from polycrystalline silicon is disposed between the rear side surface and the barrier layer.
2 more elements
A semiconductor device comprising:
- semiconductor elements disposed at a front side of a semiconductor portion;
- and
- a barrier portion comprising at least one of silicon carbide, a ternary nitride and a ternary carbide disposed on a second surface of the semiconductor portion opposite to the front side, the second surface being defined in an inner portion of the semiconductor device by device regions of the semiconductor elements, and in an outer portion of the semiconductor device by a single support ring of the semiconductor device;
- and
- an intermediate portion comprising polycrystalline silicon sandwiched between the second surface and the barrier portion.
2 more elements
A semiconductor slice comprising:
- a recessed portion having a planar rear side surface and a planar front side surface;
- an unrecessed portion having a planar rear side surface and a planar front side surface that is co-planar with the planar front side surface of the recessed portion;
- and
- a barrier layer comprising at least one of silicon carbide, a ternary nitride and a ternary carbide formed on at least one of the planar rear side surface of the recessed portion and the planar rear side surface of the unrecessed portion,
- wherein the unrecessed portion is defined by a single support ring concentric to a horizontal center of the semiconductor slice, and wherein a polycrystalline silicon layer is disposed between the planar rear side surface of the recessed portion and the barrier layer, or disposed between the planar rear side surface of the unrecessed portion and the barrier layer.
2 more elements
Dependencies are inferred from the claim text.